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Titolo:
Fabrication of PZT films on Si substrates by sol-gel method using Y2O3 buffer layers
Autore:
Park, BE; Ishiwara, H;
Indirizzi:
Tokyo Inst Technol, Precis & Intelligence Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan Tokyo Inst Technol Yokohama Kanagawa Japan 2268503 anagawa 2268503, Japan Tokyo Inst Technol, Frontier Collaborat Res Ctr, Midori Ku, Yokohama, Kanagawa 2268503, Japan Tokyo Inst Technol Yokohama Kanagawa Japan 2268503 anagawa 2268503, Japan
Titolo Testata:
INTEGRATED FERROELECTRICS
fascicolo: 1-4, volume: 33, anno: 2001,
pagine: 109 - 116
SICI:
1058-4587(2001)33:1-4<109:FOPFOS>2.0.ZU;2-Q
Fonte:
ISI
Lingua:
ENG
Keywords:
PZT; Y2O3; MBE; sol-gel; ozone;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
Citazioni:
3
Recensione:
Indirizzi per estratti:
Indirizzo: Park, BE Tokyo Inst Technol, Precis & Intelligence Lab, Midori Ku, 4259 Nagatsuta, Yokohama, Kanagawa 2268503, Japan Tokyo Inst Technol 4259 Nagatsuta Yokohama Kanagawa Japan 2268503
Citazione:
B.E. Park e H. Ishiwara, "Fabrication of PZT films on Si substrates by sol-gel method using Y2O3 buffer layers", INTEGR FERR, 33(1-4), 2001, pp. 109-116

Abstract

We demonstrate the ferroelectric behavior of PZT films grown on Si(111) substrates by using Y2O3 buffer layers. Y2O3 films were prepared by MBE. Then, they were subjected to rx situ dry O-2 annealing in an RTA furnace. On these substrates. PZT films (200 nm) were deposited by sol-gel method and they were characterized by XRD analysis and SIMS depth profile measurement after annealing under various conditions. It was found from C-V characteristics that the memory window of PZT film annealed at 550 degreesC for 30 min inozone atmosphere was about 5.7 V for the voltage sweep of +/- 20 V. These results indicate that the post annealing condition at 550 degreesC for 30 min in ozone atmosphere is most suitable for fabricating a PZT film on Y2O3/Si(111) structure by sol-gel method.

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Documento generato il 29/05/20 alle ore 17:08:54