Catalogo Articoli (Spogli Riviste)

OPAC HELP

Titolo:
Ferroelectric properties of YMnO3 thin films prepared by chemical solutiondeposition
Autore:
IL Cheon, C; Yun, KY; Kim, JS; Kim, JH;
Indirizzi:
Hoseo Univ, Dept Mat & Mech, Chungnam 336795, South Korea Hoseo Univ Chungnam South Korea 336795 ech, Chungnam 336795, South Korea Chonnam Natl Univ, Dept Ceram Engn, Kwangju 500757, South Korea Chonnam Natl Univ Kwangju South Korea 500757 Kwangju 500757, South Korea
Titolo Testata:
INTEGRATED FERROELECTRICS
fascicolo: 1-4, volume: 34, anno: 2001,
pagine: 1513 - 1520
SICI:
1058-4587(2001)34:1-4<1513:FPOYTF>2.0.ZU;2-J
Fonte:
ISI
Lingua:
ENG
Soggetto:
NONVOLATILE MEMORY DEVICES; CANDIDATE;
Keywords:
YMnO3; ferroelectric thin film; ferroelectric memory;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
Citazioni:
8
Recensione:
Indirizzi per estratti:
Indirizzo: IL Cheon, C Hoseo Univ, Dept Mat & Mech, Chungnam 336795, South Korea Hoseo Univ Chungnam South Korea 336795 m 336795, South Korea
Citazione:
C. IL Cheon et al., "Ferroelectric properties of YMnO3 thin films prepared by chemical solutiondeposition", INTEGR FERR, 34(1-4), 2001, pp. 1513-1520

Abstract

The YMnO3 thin films were prepared on platinized silicon substrates by chemical solution deposition. The films were crystallized by annealing at 850 degreesC for 1 hour under various atmospheres, i.e., O-2, air, Ar, and vacuum. Effects of annealing atmospheres on the crystallization behavior and electrical properties were investigated. Crystallization behavior of an YMnO3thin film critically depended on the oxygen partial pressure of the annealing atmosphere. The YMnO3 thin film annealed in Ar showed a superior crystallinity and a strongest c-axis preferred orientation. Leakage current density decreased with lowering oxygen partial pressure of the annealing atmosphere. The C-V and P-E ferroelectric hysteresis were found only in the YMnO3 thin film annealed under Ar atmosphere. Leakage current density, dielectricconstant(epsilon (r))(,) remanent polarization(P-r) and coercive field(Ec)of the film annealed in Ar were 1.7x10(-8) A/cm(2) at 1 volt, 25, 1.08 muC/cm(2), and 100 kV/cm, respectively.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 01/12/20 alle ore 22:25:08