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Titolo:
Fast voltage transients in capacitive silicon-to-cell stimulation detectedwith a luminescent molecular electronic probe
Autore:
Braun, D; Fromherz, P;
Indirizzi:
Max Planck Inst Biochem, Dept Membrane & Neurophys, D-82152 Martinsried, Germany Max Planck Inst Biochem Martinsried Germany D-82152 Martinsried, Germany
Titolo Testata:
PHYSICAL REVIEW LETTERS
fascicolo: 13, volume: 86, anno: 2001,
pagine: 2905 - 2908
SICI:
0031-9007(20010326)86:13<2905:FVTICS>2.0.ZU;2-C
Fonte:
ISI
Lingua:
ENG
Soggetto:
AMPHIPHILIC HEMICYANINE DYES; CHARGE-SHIFT PROBES; LIPID BILAYER; FLUORESCENCE; MEMBRANE; NEURON; TRANSISTOR; RESPONSES; JUNCTION; LEECH;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
23
Recensione:
Indirizzi per estratti:
Indirizzo: Fromherz, P Max Planck Inst Biochem, Dept Membrane & Neurophys, D-82152 Martinsried, Germany Max Planck Inst Biochem Martinsried Germany D-82152 Germany
Citazione:
D. Braun e P. Fromherz, "Fast voltage transients in capacitive silicon-to-cell stimulation detectedwith a luminescent molecular electronic probe", PHYS REV L, 86(13), 2001, pp. 2905-2908

Abstract

The capacitive stimulation of nerve cells from semiconductor chips is a prerequisite for the development of neuroelectronic devices. We report on theprimary response of a cell membrane to a voltage step applied to oxidized silicon. It is observed with a luminescent voltage-sensitive dye. We find exponential voltage transients with a time constant of 1-5 mus. We assign the short response to an electrical decoupling by a thin film of electrolyte between oxide and membrane. The high-pass filtering of stimulation is a crucial constraint for the development of silicon-to-neuron interfaces.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 28/09/20 alle ore 22:06:11