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Titolo:
Atomic wire oxidation of H-terminated Si(100)-(2 x 1): Domino reaction viaoxidation and H migration
Autore:
Kato, K; Kajiyama, H; Heike, S; Hashizume, T; Uda, T;
Indirizzi:
Toshiba Corp, Adv Mat & Devices Lab, Corp Res & Dev Ctr, Saiwai Ku, Kawasaki, Kanagawa 2108582, Japan Toshiba Corp Kawasaki Kanagawa Japan 2108582 aki, Kanagawa 2108582, Japan Hitachi Ltd, Adv Res Lab, Hatoyama, Saitama 3500395, Japan Hitachi Ltd Hatoyama Saitama Japan 3500395 toyama, Saitama 3500395, Japan Angstrom Technol Partnership, Joint Res Ctr Atom Technol, Tsukuba, Ibaraki3050046, Japan Angstrom Technol Partnership Tsukuba Ibaraki Japan 3050046 3050046, Japan
Titolo Testata:
PHYSICAL REVIEW LETTERS
fascicolo: 13, volume: 86, anno: 2001,
pagine: 2842 - 2845
SICI:
0031-9007(20010326)86:13<2842:AWOOHS>2.0.ZU;2-P
Fonte:
ISI
Lingua:
ENG
Soggetto:
H-2 DESORPTION; HYDROGEN; SURFACES; ADSORPTION; KINETICS; SI(001);
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
16
Recensione:
Indirizzi per estratti:
Indirizzo: Kato, K Toshiba Corp, Adv Mat & Devices Lab, Corp Res & Dev Ctr, Saiwai Ku, 1 Komukai Toshiba Cho, Kawasaki, Kanagawa 2108582, Japan Toshiba Corp 1 Komukai Toshiba Cho Kawasaki Kanagawa Japan 2108582
Citazione:
K. Kato et al., "Atomic wire oxidation of H-terminated Si(100)-(2 x 1): Domino reaction viaoxidation and H migration", PHYS REV L, 86(13), 2001, pp. 2842-2845

Abstract

We studied oxidation at a dangling bond (DB) on the H-terminated Si(100) surface by the first-principles calculations. We found that oxidation easilyoccurs at the exposed DB on the H-terminated Si(100) surface. The dissociated O atoms are chemisorbed at a dimer bond and a back bond, resulting in adjacent H atom migration onto the DB. As a consequence of the alternate oxidation and subsequent H atom migration processes, the atomic wire oxidationis actually found to occur on the H-terminated Si(100) surface at low temperatures without desorbing H atoms, as observed in our scanning tunneling microscopy experiment.

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Documento generato il 02/12/20 alle ore 17:58:39