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Titolo:
High field magnetoresistance and ESR measurements on Ni stripes on GaAs substrate
Autore:
Matsuo, A; Taki, M; Haque, SA; Yamamoto, Y; Kikutani, T; Yamada, S; Nojiri, H; Motokawa, M; Hori, H;
Indirizzi:
JAIST, Mat Sci, Tatsunokuchi, Ishikawa 9231292, Japan JAIST Tatsunokuchi Ishikawa Japan 9231292 okuchi, Ishikawa 9231292, Japan Tohoku Univ, IMR, Sendai, Miyagi 9808577, Japan Tohoku Univ Sendai MiyagiJapan 9808577 MR, Sendai, Miyagi 9808577, Japan
Titolo Testata:
PHYSICA B
, volume: 294, anno: 2001,
pagine: 298 - 301
SICI:
0921-4526(200101)294:<298:HFMAEM>2.0.ZU;2-W
Fonte:
ISI
Lingua:
ENG
Keywords:
mesoscopic effect; magnetic domain; Ni; GaAs; ESR;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Citazioni:
7
Recensione:
Indirizzi per estratti:
Indirizzo: Matsuo, A JAIST, Mat Sci, Tatsunokuchi, Ishikawa 9231292, Japan JAIST Tatsunokuchi Ishikawa Japan 9231292 hikawa 9231292, Japan
Citazione:
A. Matsuo et al., "High field magnetoresistance and ESR measurements on Ni stripes on GaAs substrate", PHYSICA B, 294, 2001, pp. 298-301

Abstract

Ni nanowires fabricated on a GaAs substrate, which have width narrower than 500 nm and thickness 50 nm, showed an antiferromagnetic-like domain structure. Many Ni nanowires fabricated on GaAs using the electron beam lithography technique have been studied by electron spin resonance (ESR). Splittingof ESR signals in the frequency-field diagram was observed around 57GHz, although only a ferromagnetic resonance mode was observed for other frequencies. This mode is suggested to be an antiferromagnetic resonance related tothe domain structure on the Ni nanowires. (C) 2001 Elsevier Science B.V. All rights reserved.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 12/08/20 alle ore 20:57:48