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Titolo:
Atomic layer deposition of SrTiO3 thin films from a novel strontium precursor-strontium-bis(tri-isopropylcyclopentadienyl)
Autore:
Vehkamaki, M; Hanninen, T; Ritala, M; Leskela, M; Sajavaara, T; Rauhala, E; Keinonen, J;
Indirizzi:
Univ Helsinki, Dept Chem, FIN-00014 Helsinki, Finland Univ Helsinki Helsinki Finland FIN-00014 em, FIN-00014 Helsinki, Finland Univ Helsinki, Accelerator Lab, FIN-00014 Helsinki, Finland Univ HelsinkiHelsinki Finland FIN-00014 ab, FIN-00014 Helsinki, Finland
Titolo Testata:
CHEMICAL VAPOR DEPOSITION
fascicolo: 2, volume: 7, anno: 2001,
pagine: 75 - 80
SICI:
0948-1907(200103)7:2<75:ALDOST>2.0.ZU;2-H
Fonte:
ISI
Lingua:
ENG
Soggetto:
CHEMICAL-VAPOR-DEPOSITION; TITANIUM ISOPROPOXIDE; TOF-ERDA; EPITAXY; GROWTH; OXIDE; PRECURSORS; SURFACE; ALE; CVD;
Keywords:
atomic layer deposition; dielectric; strontium bis(tri-isopropylcyclopentadienyl); strontium titanate; thin films;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
Citazioni:
45
Recensione:
Indirizzi per estratti:
Indirizzo: Vehkamaki, M Univ Helsinki, Dept Chem, POB 55, FIN-00014 Helsinki, FinlandUniv Helsinki POB 55 Helsinki Finland FIN-00014 nki, Finland
Citazione:
M. Vehkamaki et al., "Atomic layer deposition of SrTiO3 thin films from a novel strontium precursor-strontium-bis(tri-isopropylcyclopentadienyl)", CHEM VAPOR, 7(2), 2001, pp. 75-80

Abstract

Strontium titanate thin films were grown by atomic layer deposition (ALD) at 250-325 degreesC from the novel strontium compound, strontium bis(tri-isopropyl cyclopentadienyl), titanium tetraisopropoxide, and water. Though completely self-limiting,. deposition of strontium could not be achieved because of some minor decomposition of the strontium compound. This decomposition was slow enough to ensure that good control of film stoichiometry was obtained by controlling either the (Sr-O)/(Ti-O) pulsing ratio, or the strontium precursor exposure time. The films were polycrystalline and strongly oriented in the (100) direction. After annealing at 500 degreesC in air, the films with the optimal composition were found to have measured permittivityvalues of around 180.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 24/09/20 alle ore 01:00:55