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Titolo:
Stability of unhydrogenated polysilicon thin film transistors and structural quality of the channel material
Autore:
Toutah, H; Tala-Ighil, B; Llibre, JF; Rahal, A; Mourgues, K; Helen, Y; Brahim, TM; Dassow, R; Kohler, JR;
Indirizzi:
LUSAC, F-50130 Octeville, France LUSAC Octeville France F-50130LUSAC, F-50130 Octeville, France Univ Rennes 1, GMV, CNRS, UPRESA 6076, F-35042 Rennes, France Univ Rennes 1 Rennes France F-35042 UPRESA 6076, F-35042 Rennes, France USTHB, Inst Phys, LCMS, Algiers, Algeria USTHB Algiers AlgeriaUSTHB, Inst Phys, LCMS, Algiers, Algeria Univ Stuttgart, IPE, D-70569 Stuttgart, Germany Univ Stuttgart StuttgartGermany D-70569 IPE, D-70569 Stuttgart, Germany
Titolo Testata:
THIN SOLID FILMS
fascicolo: 1-2, volume: 383, anno: 2001,
pagine: 299 - 302
SICI:
0040-6090(20010215)383:1-2<299:SOUPTF>2.0.ZU;2-9
Fonte:
ISI
Lingua:
ENG
Keywords:
thin film transistors (TFTs); reliability; polysilicon; structure;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
Citazioni:
6
Recensione:
Indirizzi per estratti:
Indirizzo: Brahim, TM LUSAC, Site Univ,BP78, F-50130 Octeville, France LUSAC Site Univ,BP78 Octeville France F-50130 cteville, France
Citazione:
H. Toutah et al., "Stability of unhydrogenated polysilicon thin film transistors and structural quality of the channel material", THIN SOL FI, 383(1-2), 2001, pp. 299-302

Abstract

The performance of polysilicon thin film transistors used in large-area electronics applications, directly depends on the structural quality of the channel material. Moreover, their stability under electrical stress is shown, in this work, to also depend on the quality of the channel material. TFTswere fabricated using several channel materials, deposited as an amorphousfilm by low-pressure chemical vapor deposition (LPCVD), and then crystallized using solid-phase annealing, a large-area pulsed excimer laser, or scanning with a 532-nm beam of a pulsed diode pumped Nd:YVO4 laser. The stability of the TFTs, determined from the increase in the subthreshold slope S, is shown to be related to the importance of the surface roughness and to thestructural quality of the crystallized active layer. With similar surface roughness, the stability is better when the structural quality of the active layer is improved. The increase in S is then explained by the creation ofa state in the channel material that is more effective when the structure of the polysilicon is more disordered. (C) 2001 Elsevier Science B.V. All rights reserved.

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Documento generato il 05/12/20 alle ore 13:49:30