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Titolo:
Influence of the process parameters on the properties of hydrogenated amorphous carbon thin films deposited using ECR plasma
Autore:
Piazza, F; Arnal, Y; Grambole, D; Herrmann, F; Kildemo, M; Lacoste, A; Relihan, G; Golanski, A;
Indirizzi:
CNRS UPR 292, Lab Phys & Applicat Semicond, F-67037 Strasbourg 2, France CNRS UPR 292 Strasbourg France 2 Semicond, F-67037 Strasbourg 2, France CNRS, UMR C5517, Electrostat & Mat Dielect Lab, F-38042 Grenoble, France CNRS Grenoble France F-38042 & Mat Dielect Lab, F-38042 Grenoble, France Forschungszentrum Rossendorf EV, Inst Ionenstrahlphys & Mat Forsch, D-01314 Dresden, Germany Forschungszentrum Rossendorf EV Dresden Germany D-01314 Dresden, Germany Natl Univ Ireland Univ Coll Cork, Natl Microelect Res Ctr, Cork, Ireland Natl Univ Ireland Univ Coll Cork Cork Ireland ct Res Ctr, Cork, Ireland
Titolo Testata:
THIN SOLID FILMS
fascicolo: 1-2, volume: 383, anno: 2001,
pagine: 196 - 199
SICI:
0040-6090(20010215)383:1-2<196:IOTPPO>2.0.ZU;2-1
Fonte:
ISI
Lingua:
ENG
Soggetto:
DIAMOND; SPECTRA;
Keywords:
carbon; thin films; hard coatings; optical properties; plasma processing;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
Citazioni:
16
Recensione:
Indirizzi per estratti:
Indirizzo: Golanski, A CNRS UPR 292, Lab Phys & Applicat Semicond, BP20, F-67037 Strasbourg 2, France CNRS UPR 292 BP20 Strasbourg France 2 37 Strasbourg 2, France
Citazione:
F. Piazza et al., "Influence of the process parameters on the properties of hydrogenated amorphous carbon thin films deposited using ECR plasma", THIN SOL FI, 383(1-2), 2001, pp. 196-199

Abstract

A uniformly distributed multipolar microwave plasma reactor using electroncyclotron resonance at 2.45 GHz (600 W) was used to deposit a-C:H thin films at RT. C2H2 was used as the precursor gas. Single crystal [100] Si and CR39 allelic resin substrates were RF biased to a negative voltage within the range between - 10 and - 200 V. The influence of the process parameters (gas flow and substrate bias) on the growth rate and hydrogen content have been investigated in detail. Optical parameters (optical gap E-T, index of refraction n and extinction coefficient k) were measured using spectroscopicellipsometry. The resonant (6.385 MeV) nuclear reaction: H-1(N-15, alpha gamma )12C was used to determine the hydrogen content. For the C2H2 pressurerange of 0.6 < P(C2H2) < 1.1 mtorr the optical parameters remain constant within the limits of experimental uncertainty. The sp(3) content is seen tovary monotonically as a function of pressure and to be reaching a maximum of approximately 40% for 0.6 < P(C2H2) < 0.7 mtorr. The variation of the substrate bias within the range from -10 to - 190 V [at P(C2H2) = 0.6 mtorr] has no measurable impact neither on the deposition rate nor on the hydrogencontent. The corresponding average values of E-T and n remain stable (E-T=1.83 +/- 0.11 eV, n = 2.12 +/- 0.04). However, an increase in the bias is followed by a significant decrease of the extinction coefficient k and of the absorption tail width E-o. The observed evolution of k and Eo suggests that the sp(2) clustering mode may be related to the substrate bias. (C) 2001 Elsevier Science B.V. All rights reserved.

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Documento generato il 14/07/20 alle ore 18:29:06