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Titolo:
Thickness dependent electrical resistivity of ultrathin (< 40 nm) Cu films
Autore:
Liu, HD; Zhao, YP; Ramanath, G; Murarka, SP; Wang, GC;
Indirizzi:
Rensselaer Polytech Inst, Dept Mat Sci & Engn, Dept Phys Appl Phys & Astron, Troy, NY 12180 USA Rensselaer Polytech Inst Troy NY USA 12180 s & Astron, Troy, NY 12180 USA
Titolo Testata:
THIN SOLID FILMS
fascicolo: 1, volume: 384, anno: 2001,
pagine: 151 - 156
SICI:
0040-6090(20010301)384:1<151:TDEROU>2.0.ZU;2-#
Fonte:
ISI
Lingua:
ENG
Soggetto:
METALLIC-FILMS; QUANTUM-SIZE; TRANSPORT-PROPERTIES; THIN-FILMS; GOLD-FILMS; CONDUCTIVITY; SURFACE; GROWTH; AG; OSCILLATIONS;
Keywords:
copper; resistivity; surface scattering; surface roughness; silicon dioxide;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
Citazioni:
42
Recensione:
Indirizzi per estratti:
Indirizzo: Wang, GC Rensselaer Polytech Inst, Dept Mat Sci & Engn, Dept Phys Appl Phys & Astron, Troy, NY 12180 USA Rensselaer Polytech Inst Troy NY USA 12180 n, Troy, NY 12180 USA
Citazione:
H.D. Liu et al., "Thickness dependent electrical resistivity of ultrathin (< 40 nm) Cu films", THIN SOL FI, 384(1), 2001, pp. 151-156

Abstract

Ultrathin Cu films with thicknesses d between similar to 10 and 40 nm werethermally evaporated onto similar to 500-nm thick SiO2 on Si(100) substrates in an ultra high vacuum (UHV) chamber with a base pressure of 5 x 10(-10) torr. The sheet resistance R (Omega/square), was measured in situ at different film thicknesses by a collinear four-point probe. The infinite R at d< 10 nm suggested that the film consisted of discontinuous islands at these thicknesses. The R-value dropped rapidly by more than an order of magnitude when the thickness was increased from 10 to 15 nm, indicating the coalescence of islands. Further increases in d resulted in the R value gradually leveling off at 0.65 +/- 0.01 <Omega>/square, corresponding to a resistivity rho of 2.67 mu Omega cm at d similar to 41 nm. The rho -d data were fitted by models that assume surface, interface and grain boundary scattering tobe dominant mechanisms for the thickness dependence on resistivity. Modelsthat do not include surface roughness do not fit our data in the sub-15-nmthick Cu films regime. The surface roughness was measured by atomic force microscopy (AFM). Our analysis shows that Namba's model that uses the measured surface roughness provides the best description of the resistivity-thickness behavior in sub-40-nm thick Cu films. (C) 2001 Elsevier Science B.V. All rights reserved.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 22/09/20 alle ore 13:58:14