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Titolo:
Vertical and lateral ordering in self-organized quantum dot superlattices
Autore:
Springholz, G; Pinczolits, M; Holy, V; Zerlauth, S; Vavra, I; Bauer, G;
Indirizzi:
Johannes Kepler Univ, Inst Halbleiter & Festkorperphys, A-4040 Linz, Austria Johannes Kepler Univ Linz Austria A-4040 orperphys, A-4040 Linz, Austria Masaryk Univ, Lab Thin Films & Nanostruct, CS-61137 Brno, Czech Republic Masaryk Univ Brno Czech Republic CS-61137 CS-61137 Brno, Czech Republic Slovak Acad Sci, Inst Elect Engn, SK-84239 Bratislava, Slovakia Slovak Acad Sci Bratislava Slovakia SK-84239 -84239 Bratislava, Slovakia
Titolo Testata:
PHYSICA E
fascicolo: 1, volume: 9, anno: 2001,
pagine: 149 - 163
SICI:
1386-9477(200101)9:1<149:VALOIS>2.0.ZU;2-J
Fonte:
ISI
Lingua:
ENG
Soggetto:
MOLECULAR-BEAM EPITAXY; X-RAY-DIFFRACTION; SCANNING-TUNNELING-MICROSCOPY; STRANSKI-KRASTANOV GROWTH; ASSEMBLED GE DOTS; SURFACE-MORPHOLOGY; OPTICAL-PROPERTIES; INAS ISLANDS; BOX ISLANDS; STRAIN;
Keywords:
molecular beam epitaxy; quantum dots; superlattices; atomic force microscopy; transmission electron microscopy; strain; Monte Carlo simulations;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Citazioni:
59
Recensione:
Indirizzi per estratti:
Indirizzo: Springholz, G Johannes Kepler Univ, Inst Halbleiter & Festkorperphys, Altenbergstr 69, A-4040 Linz, Austria Johannes Kepler Univ Altenbergstr 69 Linz Austria A-4040 ia
Citazione:
G. Springholz et al., "Vertical and lateral ordering in self-organized quantum dot superlattices", PHYSICA E, 9(1), 2001, pp. 149-163

Abstract

The formation of vertically and laterally ordered dot superstructures in self-organized quantum dot superlattices is described. The ordering is basedon the long-range elastic interactions between the strained self-assembledquantum dots, providing a driving force for a spatially correlated dot nucleation. For various materials systems, different types of ordered structures have been observed, ranging from vertically aligned dot superlattices for Si/Ge or III-V semiconductors to a fee-like ABCABC... stacking in IV-VI materials. It is shown that the elastic anisotropy of the spacer material plays a crucial role in this self-organization process. In particular, for materials with very high elastic anisotropy and growth orientations parallel to an elastically soft direction, layer-to-layer dot correlations inclined to the growth direction can be formed. This is shown to he particularly effective for inducing a lateral ordering of the dots within the growth plane,which can lead to a significant narrowing of the dot size dispersion. These conclusions are also supported by Monte Carlo growth simulations. (C) 2001 Elsevier Science B.V. All rights reserved.

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Documento generato il 19/09/20 alle ore 21:15:16