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Titolo:
Influence of quantity and energy of the particles in gas phase on nucleation of the HFCVD of diamond films
Autore:
Song, GH; Sun, C; Wang, B; Wang, AY; Huang, RF; Wen, LS;
Indirizzi:
Chinese Acad Sci, Inst Met Res, Shenyang 110015, Peoples R China Chinese Acad Sci Shenyang Peoples R China 110015 110015, Peoples R China Shenyang Polytech Univ, Dept Mat Engn, Shenyang 110023, Peoples R China Shenyang Polytech Univ Shenyang Peoples R China 110023 , Peoples R China
Titolo Testata:
MATERIALS LETTERS
fascicolo: 1, volume: 48, anno: 2001,
pagine: 8 - 14
SICI:
0167-577X(200103)48:1<8:IOQAEO>2.0.ZU;2-H
Fonte:
ISI
Lingua:
ENG
Soggetto:
CHEMICAL-VAPOR-DEPOSITION; AMORPHOUS-CARBON; INITIAL GROWTH; FLOW RATE; MECHANISM;
Keywords:
diamond film; hot filament chemical vapor deposition (HFCVD); nucleation density; mass current density; substrate bias;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
Citazioni:
19
Recensione:
Indirizzi per estratti:
Indirizzo: Wen, LS Chinese Acad Sci, Inst Met Res, 72 Wenhua Rd, Shenyang 110015, Peoples R China Chinese Acad Sci 72 Wenhua Rd Shenyang Peoples R China 110015ina
Citazione:
G.H. Song et al., "Influence of quantity and energy of the particles in gas phase on nucleation of the HFCVD of diamond films", MATER LETT, 48(1), 2001, pp. 8-14

Abstract

In this paper, the nucleation of diamond films was studied with the variedbias value and mass current density by adjusting the gas flow rate throughthe chamber. Results showed that the two parameters above greatly influenced the nucleation density and the morphology of diamond films. Both bias value and mass current density had an optimum value in which the nucleation density reached the maximum. The nucleation of diamond films by hot filamentchemical vapor deposition (HFCVD) is a competitive process of deposition and etches (sputtered) due to particle impact on the substrate. The magnitude of the particle energy in gas plasma and mass current density of gas controlled the competitive process and determined whose process was primary. The deposition process was gradually strengthened and the nucleation density increased due to the increment of the energy and quantity of the adatoms and reached a maximum at optimization with the increment of the two parameters mentioned above. The deposition process is suppressed by strengthened particle impact on substrate and the etch (sputtered) process was primary withthe further increment of the two parameters above. (C) 2001 Elsevier Science B.V. All rights reserved.

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Documento generato il 18/09/20 alle ore 16:56:44