Catalogo Articoli (Spogli Riviste)

OPAC HELP

Titolo:
Temperature characteristics of a-Si : H gate ISFET
Autore:
Chou, JC; Wang, YF;
Indirizzi:
Natl Yunlin Univ Sci & Technol, Inst Elect & Informat Engn, Yunlin 640, Taiwan Natl Yunlin Univ Sci & Technol Yunlin Taiwan 640 ngn, Yunlin 640, Taiwan
Titolo Testata:
MATERIALS CHEMISTRY AND PHYSICS
fascicolo: 1, volume: 70, anno: 2001,
pagine: 107 - 111
SICI:
0254-0584(20010402)70:1<107:TCOA:H>2.0.ZU;2-9
Fonte:
ISI
Lingua:
ENG
Soggetto:
FIELD-EFFECT TRANSISTOR; DEPENDENCE; INSULATOR;
Keywords:
A-Si : H pH-ISFET; temperature effect; PECVD; I-V curve; pH sensitivity;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
Citazioni:
14
Recensione:
Indirizzi per estratti:
Indirizzo: Chou, JC Natl Yunlin Univ Sci & Technol, Inst Elect & Informat Engn, Yunlin 640, Taiwan Natl Yunlin Univ Sci & Technol Yunlin Taiwan 640 in 640, Taiwan
Citazione:
J.C. Chou e Y.F. Wang, "Temperature characteristics of a-Si : H gate ISFET", MATER CH PH, 70(1), 2001, pp. 107-111

Abstract

In this paper, we put emphasis on the study of the temperature effect of the ISFET (ion sensitive field effect transistor) based on the hydrogenated amorphous silicon (a-Si:H). Since the temperature influences the propertiesof the ISFET device, we studied the influence of the temperature effect toISFET in detail. In this paper, we prepared the a-Si:H/SiO2/p-Si/Al structure of ISFET devices by plasma-enhanced chemical vapor deposition (PECVD). The thickness of the a-Si:H was 2000 Angstrom. Then we used epoxy to encapsulate the a-Si:H pH-ISFET device. Furthermore, we utilized Keithley 236 Semiconductor Parameter Analyzer to measure the I-V curve, and then pH sensitivity of the a-Si:H pH-ISFET was determined. Since the a-Si:H thin film is easily dissolved in alkaline solution, so it was measured in acid solutions between pH 1-7. The experimental results were also compared with the simulated results. We can conclude that the experimental results approximately agree with simulation results. (C) 2001 Elsevier Science B.V. All rights reserved.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 29/11/20 alle ore 00:44:28