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Titolo:
Effects of sulfur treatment on electrical and optical performance of InGaN/GaN multiple-quantum-well blue light-emitting diodes
Autore:
Huh, C; Kim, SW; Kim, HS; Kim, HM; Hwang, H; Park, SJ;
Indirizzi:
Kwangju Inst Sci & Technol, Dept Mat Sci & Engn, Kwangju 500712, South Korea Kwangju Inst Sci & Technol Kwangju South Korea 500712 00712, South Korea Kwangju Inst Sci & Technol, Ctr Optoelect Mat Res, Kwangju 500712, South Korea Kwangju Inst Sci & Technol Kwangju South Korea 500712 00712, South Korea
Titolo Testata:
APPLIED PHYSICS LETTERS
fascicolo: 12, volume: 78, anno: 2001,
pagine: 1766 - 1768
SICI:
0003-6951(20010319)78:12<1766:EOSTOE>2.0.ZU;2-2
Fonte:
ISI
Lingua:
ENG
Soggetto:
P-TYPE GAN; OHMIC CONTACTS; N-TYPE; SURFACE; TRANSPARENT;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
21
Recensione:
Indirizzi per estratti:
Indirizzo: Huh, C Kwangju Inst Sci & Technol, Dept Mat Sci & Engn, Kwangju 500712, South Korea Kwangju Inst Sci & Technol Kwangju South Korea 500712 South Korea
Citazione:
C. Huh et al., "Effects of sulfur treatment on electrical and optical performance of InGaN/GaN multiple-quantum-well blue light-emitting diodes", APPL PHYS L, 78(12), 2001, pp. 1766-1768

Abstract

The results of the sulfur treatment of multiple-quantum-well (MQW) light-emitting diodes (LEDs) with (NH4)(2)S and (NH4)(2)S + t-C4H9OH solutions prior to the deposition of a light-transmitting p-electrode metal are presented. The room-temperature I-V curves showed that the forward voltages of MQW LEDs treated with the two sulfur solutions decrease by 0.12 and 0.35 V at 20 mA, respectively, compared to the untreated MQW LED, as the result of an improvement in p-Ohmic contact characteristics. The relative light-output power and external quantum efficiency of MQW LEDs increased by a factor of 1.28 for the (NH4)(2)S treated sample and 2.23 for the (NH4)(2)S + t-C4H9OH treated sample compared to the untreated sample. In addition, the reverse leakage current characteristic of MQW LEDs was reduced as a result of sulfurtreatment. This can be attributed to the passivation of surface and sidewall damages formed after the dry-etching process for a reliable pattern transfer. The present results indicate that the sulfur treatment greatly improves the electrical and optical performance of MQW LEDs. (C) 2001 American Institute of Physics.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 29/05/20 alle ore 17:06:33