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Titolo:
X-ray absorption spectroscopy investigations on oxidized Ni/Au contacts top-GaN
Autore:
Jan, JC; Asokan, K; Chiou, JW; Pong, WF; Tseng, PK; Chen, LC; Chen, FR; Lee, JF; Wu, JS; Lin, HJ; Chen, CT;
Indirizzi:
Tamkang Univ, Dept Phys, Tamsui 251, Taiwan Tamkang Univ Tamsui Taiwan 251 mkang Univ, Dept Phys, Tamsui 251, Taiwan Natl Tsing Hua Univ, Dept Engn Syst Sci, Hsinchu 300, Taiwan Natl Tsing Hua Univ Hsinchu Taiwan 300 ngn Syst Sci, Hsinchu 300, Taiwan Synchrotron Radiat Res Ctr, Hsinchu 300, Taiwan Synchrotron Radiat Res Ctr Hsinchu Taiwan 300 s Ctr, Hsinchu 300, Taiwan
Titolo Testata:
JOURNAL OF SYNCHROTRON RADIATION
, volume: 8, anno: 2001,
parte:, 2
pagine: 827 - 829
SICI:
0909-0495(200103)8:<827:XASIOO>2.0.ZU;2-6
Fonte:
ISI
Lingua:
ENG
Soggetto:
RESISTANCE OHMIC CONTACTS;
Keywords:
p-GaN; X-ray absorption; Ni/Au contacts; p-NiO;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Citazioni:
10
Recensione:
Indirizzi per estratti:
Indirizzo: Asokan, K Tamkang Univ, Dept Phys, Tamsui 251, Taiwan Tamkang Univ Tamsui Taiwan 251 , Dept Phys, Tamsui 251, Taiwan
Citazione:
J.C. Jan et al., "X-ray absorption spectroscopy investigations on oxidized Ni/Au contacts top-GaN", J SYNCHROTR, 8, 2001, pp. 827-829

Abstract

X-ray absorption spectroscopy was used to investigate the electronic structure of as-deposited and oxidized Ni/Au contacts to p-GaN and to elucidate the mechanism responsible for low impedance. X-ray absorption near edge spectra of Ni K- and L-3,L-2-edges clearly indicate formation of NiO on the sample surface after annealing. The reason for low impedance may be attributed to increase in hole concentration and existence of p-NiO layer on the surface.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 04/07/20 alle ore 16:49:32