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Titolo:
X-ray-excited optical luminescence of impurity atom in semiconductor
Autore:
Ishii, M; Tanaka, Y; Komuro, S; Morikawa, T; Aoyagi, Y; Ishikawa, T;
Indirizzi:
JASRI, SPring 8, Hyogo 6795198, Japan JASRI Hyogo Japan 6795198JASRI, SPring 8, Hyogo 6795198, Japan RIKEN, Harima Inst, SPring 8, Hyogo 6795148, Japan RIKEN Hyogo Japan 6795148 N, Harima Inst, SPring 8, Hyogo 6795148, Japan Toyo Univ, Fac Engn, Kawagoe, Saitama 3508585, Japan Toyo Univ Kawagoe Saitama Japan 3508585 , Kawagoe, Saitama 3508585, Japan RIKEN, Wako, Saitama 3510198, Japan RIKEN Wako Saitama Japan 3510198RIKEN, Wako, Saitama 3510198, Japan
Titolo Testata:
JOURNAL OF SYNCHROTRON RADIATION
, volume: 8, anno: 2001,
parte:, 2
pagine: 372 - 374
SICI:
0909-0495(200103)8:<372:XOLOIA>2.0.ZU;2-X
Fonte:
ISI
Lingua:
ENG
Soggetto:
SITE-SELECTIVE EXAFS; ACTIVATION PROCESS; LASER-ABLATION; THIN-FILM; ER; EXCITATION; SILICON; EMISSION; XAFS;
Keywords:
site-selectivity at atomic level; XEOL; infrared; optically active Er atom; phonon-absorption;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Citazioni:
15
Recensione:
Indirizzi per estratti:
Indirizzo: Ishii, M JASRI, SPring 8, Hyogo 6795198, Japan JASRI Hyogo Japan 6795198JASRI, SPring 8, Hyogo 6795198, Japan
Citazione:
M. Ishii et al., "X-ray-excited optical luminescence of impurity atom in semiconductor", J SYNCHROTR, 8, 2001, pp. 372-374

Abstract

We observed the x-ray-excited optical luminescence (XEOL) of erbium-doped silicon (Si:Er) thin films to make a site-selective x-ray absorption fine structure (XAFS) measurement of an optically active Er atom. The undulator beam was used for the increment of the electron population in the excited state, and following XEOL at an infrared wavelength of 1.54 mum with minimum absorption loss in the host Si was detected. The edge-jump and XAFS oscillation were successfully obtained at the Er L-III-edge. This spectrum originated from inner-shell excitation and relaxation of only the optically activeEr atom, indicating that site-selectivity at an atomic level was achieved.

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Documento generato il 09/07/20 alle ore 20:27:41