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Titolo:
Effect of processing conditions on inversion layer mobility and interface state density in 4H-SiC MOSFETs
Autore:
Banerjee, S; Chatty, K; Chow, TP; Gutmann, RJ;
Indirizzi:
Rensselaer Polytech Inst, Ctr Integrated Elect & Elect Mfg, Troy, NY 12180USA Rensselaer Polytech Inst Troy NY USA 12180 & Elect Mfg, Troy, NY 12180USA
Titolo Testata:
JOURNAL OF ELECTRONIC MATERIALS
fascicolo: 3, volume: 30, anno: 2001,
pagine: 253 - 259
SICI:
0361-5235(200103)30:3<253:EOPCOI>2.0.ZU;2-4
Fonte:
ISI
Lingua:
ENG
Soggetto:
CARBIDE;
Keywords:
4H-SiC; MOSFET; field-effect mobility; interface states;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
23
Recensione:
Indirizzi per estratti:
Indirizzo: Banerjee, S Rensselaer Polytech Inst, Ctr Integrated Elect & Elect Mfg, Troy, NY 12180USA Rensselaer Polytech Inst Troy NY USA 12180 Troy, NY 12180USA
Citazione:
S. Banerjee et al., "Effect of processing conditions on inversion layer mobility and interface state density in 4H-SiC MOSFETs", J ELEC MAT, 30(3), 2001, pp. 253-259

Abstract

N-channel, inversion mode MOSFETs have been fabricated on 4H-SiC using different oxidation procedures, source/drain implant species and implant activation temperature. The fixed oxide charge and the field-effect mobility in the inversion layer have been extracted, with best values of 1.8 x 10(12) cm(-2) and 14 cm(2) N-s, respectively. The interface state density, D-it close to the conduction band of 4H-SiC has been extracted from the subthreshold drain characteristics of the MOSFETs. A comparison of interface state density, inversion layer mobility and fixed oxide charges between the different processes indicate that pull-out in wet ambient after reoxidation of gateoxide improves the 4H-SiC/SiO2 interface quality.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 30/09/20 alle ore 02:12:16