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Titolo:
Reactor and reaction model for the hot-wire chemical vapor deposition of silicon from silane
Autore:
Pant, A; Huff, MC; Russell, TWF;
Indirizzi:
Univ Delaware, Dept Chem Engn, Newark, DE 19716 USA Univ Delaware Newark DE USA 19716 e, Dept Chem Engn, Newark, DE 19716 USA
Titolo Testata:
INDUSTRIAL & ENGINEERING CHEMISTRY RESEARCH
fascicolo: 5, volume: 40, anno: 2001,
pagine: 1386 - 1396
SICI:
0888-5885(20010307)40:5<1386:RARMFT>2.0.ZU;2-H
Fonte:
ISI
Lingua:
ENG
Soggetto:
HYDROGENATED AMORPHOUS-SILICON; A-SI-H; GAS-PHASE; MICROCRYSTALLINE SILICON; SURFACE-REACTIONS; ATOMIC-HYDROGEN; KINETICS; PLASMA; RECOMBINATION; CHEMISTRY;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Engineering, Computing & Technology
Citazioni:
32
Recensione:
Indirizzi per estratti:
Indirizzo: Russell, TWF Univ Delaware, Dept Chem Engn, Newark, DE 19716 USA Univ Delaware Newark DE USA 19716 Engn, Newark, DE 19716 USA
Citazione:
A. Pant et al., "Reactor and reaction model for the hot-wire chemical vapor deposition of silicon from silane", IND ENG RES, 40(5), 2001, pp. 1386-1396

Abstract

A quantitative model of the deposition of silicon films by hot-wire chemical vapor deposition (HWCVD) is presented, and its predictions are compared with experiments. The model equations describe a vacuum reactor in which silane cracks over a series of heated tantalum wires, reacts further in the gas phase, and deposits in the form of silicon films on glass substrates. The model considers gas motion in the reactor and incorporates surface pyrolysis reactions on the hot wire, gas-phase reactions, and film-growth reactions on the substrate. The model predictions of silane conversion and siliconfilm growth rate are in good agreement with the experimental results over the range of conditions studied. This study shows that a critical ratio of atomic hydrogen flux relative to the total flux of growth precursors is required at the film surface for transition from amorphous to polycrystalline silicon films. The flux ratio of hydrogen radical to growth precursors is controlled by the pressure, filament temperature, and silane flow rate. For the conditions investigated, a flux ratio greater than 15 leads to the deposition of polycrystalline silicon films.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 04/12/20 alle ore 13:29:25