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Titolo:
THE EFFECT OF FILM EDGE SHAPES ON THE STRESS-FIELD FOR A MULTILAYEREDSEMICONDUCTOR STRUCTURE - A FINITE-ELEMENT ANALYSIS STUDY
Autore:
VALDES SHD; NEMES JA; JIRAN E;
Indirizzi:
MCGILL UNIV,DEPT ENGN MECH MONTREAL PQ H3A 2A7 CANADA MCGILL UNIV,DEPT ENGN MECH MONTREAL PQ H3A 2A7 CANADA MPB TECHNOL INC POINTE CLAIRE PQ CANADA
Titolo Testata:
Journal of crystal growth
fascicolo: 3, volume: 178, anno: 1997,
pagine: 268 - 275
SICI:
0022-0248(1997)178:3<268:TEOFES>2.0.ZU;2-D
Fonte:
ISI
Lingua:
ENG
Soggetto:
INDUCED DISLOCATION GENERATION; LATERAL OVERGROWTH; ISOLATION TRENCHES; THEORETICAL-MODEL; GAAS CRYSTALS; REDUCTION; GROWTH;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
24
Recensione:
Indirizzi per estratti:
Citazione:
S.H.D. Valdes et al., "THE EFFECT OF FILM EDGE SHAPES ON THE STRESS-FIELD FOR A MULTILAYEREDSEMICONDUCTOR STRUCTURE - A FINITE-ELEMENT ANALYSIS STUDY", Journal of crystal growth, 178(3), 1997, pp. 268-275

Abstract

Resolved shear stress distributions, arising from thermal stresses induced by temperature variations, are calculated near the corners of the discontinuities of SiO2 film deposited over a GaAs substrate and covered with an overlay of InGaAs. The resolved shear stress distributions are then used to determine the location and extent of the area, where dislocations are expected to occur by comparison to the critical-resolved shear stress value of the material. The implications on the stress distribution of a modification in the original shape of the film edge are illustrated and discussed as a possibility to reduce dislocation occurrence.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 31/03/20 alle ore 18:55:48