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Titolo:
Enhanced passivation of the oxide/SiGe interface of SiGe epitaxial layers on Si by anodic oxidation
Autore:
Rappich, J; Sieber, I; Knippelmeyer, R;
Indirizzi:
Hahn Meitner Inst Kernforsch Berlin GmbH, Abt Silizium Photovoltaik, D-12489 Berlin, Germany Hahn Meitner Inst Kernforsch Berlin GmbH Berlin Germany D-12489 Germany Univ Munster, Inst Phys, ICEM, D-48149 Munster, Germany Univ Munster Munster Germany D-48149 hys, ICEM, D-48149 Munster, Germany
Titolo Testata:
ELECTROCHEMICAL AND SOLID STATE LETTERS
fascicolo: 3, volume: 4, anno: 2001,
pagine: B11 - B13
SICI:
1099-0062(200103)4:3<B11:EPOTOI>2.0.ZU;2-2
Fonte:
ISI
Lingua:
ENG
Soggetto:
LOW-TEMPERATURE PASSIVATION; SILICON SURFACES; ROOM-TEMPERATURE; SI1-XGEX ALLOYS; PHOTOLUMINESCENCE;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Citazioni:
18
Recensione:
Indirizzi per estratti:
Indirizzo: Rappich, J Hahn Meitner Inst Kernforsch Berlin GmbH, Abt Silizium Photovoltaik, D-12489 Berlin, Germany Hahn Meitner Inst Kernforsch Berlin GmbH Berlin Germany D-12489
Citazione:
J. Rappich et al., "Enhanced passivation of the oxide/SiGe interface of SiGe epitaxial layers on Si by anodic oxidation", EL SOLID ST, 4(3), 2001, pp. B11-B13

Abstract

We have compared anodically and rapid-thermally oxidized thin SiGe epitaxial layers on silicon. X-ray photoelectron, Auger, and Fourier transform infrared spectroscopies show the existence of SiO2 and Si-O-Ge for anodic oxides, whereas thermally grown oxides consist of pure SiO2. The spatially resolved distribution of the elements in the layer has been investigated by electron energy loss spectroscopy images at microtomed samples. Thermal oxidation leads to a pile-up of Ge at the oxide/SiGe interface and Ge outdiffusion into the Si substrate. The Ge profile in the strained SiGe lattice of epitaxial layers is not affected by applying the electrochemical oxidation treatment. This leads to a significant increase of the photoluminescence intensity due to a decrease of nonradiative recombination, i.e. to a decrease ofdefect states at the interfaces. (C) 2001 The Electrochemical Society.

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Documento generato il 21/09/20 alle ore 16:02:44