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Titolo:
Record power characteristics of InGaAs/AlGaAs/GaAs heterostructure lasers
Autore:
Livshits, DA; Egorov, AY; Kochnev, IV; Kapitonov, VA; Lantratov, VM; Ledentsov, NN; Nalyot, TA; Tarasov, IS;
Indirizzi:
Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia Russian Acad Sci St Petersburg Russia 194021 t Petersburg 194021, Russia
Titolo Testata:
SEMICONDUCTORS
fascicolo: 3, volume: 35, anno: 2001,
pagine: 365 - 369
SICI:
1063-7826(2001)35:3<365:RPCOIH>2.0.ZU;2-1
Fonte:
ISI
Lingua:
ENG
Soggetto:
DIODE-LASERS;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
10
Recensione:
Indirizzi per estratti:
Indirizzo: Livshits, DA Russian Acad Sci, AF Ioffe Physicotech Inst, Politekhnicheskaya Ul 26, St Petersburg 194021, Russia Russian Acad Sci Politekhnicheskaya Ul 26 St Petersburg Russia 194021
Citazione:
D.A. Livshits et al., "Record power characteristics of InGaAs/AlGaAs/GaAs heterostructure lasers", SEMICONDUCT, 35(3), 2001, pp. 365-369

Abstract

Continuous-wave output powers of 9.2 W at a constant heatsink temperature of 10 degreesC and 12.2 W at a stabilized temperature of the active region have been obtained on an InGaAs/AlGaAs laser with a 0.4-mum-thick waveguide, operating at 1.03 mum. Record-breaking output mirror power densities of, respectively, 29.9 and 40 MW/cm(2) have been achieved without catastrophic optical mirror damage in the two temperature-stabilization regimes. A maximum power conversion efficiency of 66% has been achieved in a laser with a cavity length of 2 mm. (C) 2001 MAIK "Nauka/ Interperiodica".

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Documento generato il 30/09/20 alle ore 01:39:39