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Titolo:
Accurate electrical resistance measurement of the crystallization kineticsof amorphous alloys
Autore:
Wang, YP; Lu, K;
Indirizzi:
Acad Sinica, Inst Met Res, State Key Lab RSA, Shenyang 110015, Peoples R China Acad Sinica Shenyang Peoples R China 110015 yang 110015, Peoples R China
Titolo Testata:
SCIENCE IN CHINA SERIES E-TECHNOLOGICAL SCIENCES
fascicolo: 1, volume: 44, anno: 2001,
pagine: 33 - 41
SICI:
2095-0624(200102)44:1<33:AERMOT>2.0.ZU;2-V
Fonte:
ISI
Lingua:
ENG
Soggetto:
METALLIC GLASSES; ACTIVATION-ENERGIES; GROWTH;
Keywords:
electrical resistance; amorphous alloys; crystallization; nucleation; growth;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Engineering, Computing & Technology
Citazioni:
26
Recensione:
Indirizzi per estratti:
Indirizzo: Lu, K Acad Sinica, Inst Met Res, State Key Lab RSA, Shenyang 110015, Peoples R China Acad Sinica Shenyang Peoples R China 110015 10015, Peoples R China
Citazione:
Y.P. Wang e K. Lu, "Accurate electrical resistance measurement of the crystallization kineticsof amorphous alloys", SCI CHINA E, 44(1), 2001, pp. 33-41

Abstract

An accurate four-line ac electrical resistance measurement (ERM) apparatuswas developed. By using the ERM the crystallization kinetics of amorphous NI80P20, FeZr2, Fe86B14 alloys were investigated. The experimental results show that the ERM can identify the early stage of crystallization in amorphous alloys. The ERM detects a crystallization temperature range obviously wider than the DSC does, indicating that the ERM is more sensitive to the structure evolution in crystallization. For the eutectic or polymorphic crystallization, three distinct processes can be identified from the measured resistance variation: (i) crystal nucleation, (ii) subsequent growth of crystal nuclei, and (iii) coarsening of the crystallites. In the early stage of the primary crystallization, the ERM results reflect the nucleation information as well.

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Documento generato il 22/10/20 alle ore 09:08:09