Catalogo Articoli (Spogli Riviste)

OPAC HELP

Titolo:
Structural-relaxation-induced bond length and bond angle changes in amorphized Ge - art. no. 073204
Autore:
Glover, CJ; Ridgway, MC; Yu, KM; Foran, GJ; Desnica-Frankovic, D; Clerc, C; Hansen, JL; Nylandsted-Larsen, A;
Indirizzi:
Australian Natl Univ, Dept Elect Mat Engn, Canberra, ACT, Australia Australian Natl Univ Canberra ACT Australia gn, Canberra, ACT, Australia Univ Calif Berkeley, Lawrence Berkeley Lab, Div Mat Sci, Berkeley, CA 94720 USA Univ Calif Berkeley Berkeley CA USA 94720 Mat Sci, Berkeley, CA 94720 USA Australian Nucl Sci & Technol Org, Menai, NSW 2234, Australia Australian Nucl Sci & Technol Org Menai NSW Australia 2234 234, Australia Rudjer Boskovic Inst, Dept Phys, Zagreb, Croatia Rudjer Boskovic Inst Zagreb Croatia ic Inst, Dept Phys, Zagreb, Croatia CNRS, Ctr Spectrometrie Nucl & Spectrometrie Masse, F-91405 Orsay, France CNRS Orsay France F-91405 l & Spectrometrie Masse, F-91405 Orsay, France Aarhus Univ, Inst Phys & Astron, Aarhus, Denmark Aarhus Univ Aarhus Denmark us Univ, Inst Phys & Astron, Aarhus, Denmark
Titolo Testata:
PHYSICAL REVIEW B
fascicolo: 7, volume: 6307, anno: 2001,
pagine: 3204 -
SICI:
0163-1829(20010215)6307:7<3204:SBLABA>2.0.ZU;2-4
Fonte:
ISI
Lingua:
ENG
Soggetto:
MOLECULAR-DYNAMICS SIMULATION; AMORPHOUS-GERMANIUM; EXAFS ANALYSIS; SILICON; CRYSTALLIZATION; SI; PROGRAM; ENERGY; ORDER;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
27
Recensione:
Indirizzi per estratti:
Indirizzo: Glover, CJ Australian Natl Univ, Dept Elect Mat Engn, Canberra, ACT, Australia Australian Natl Univ Canberra ACT Australia a, ACT, Australia
Citazione:
C.J. Glover et al., "Structural-relaxation-induced bond length and bond angle changes in amorphized Ge - art. no. 073204", PHYS REV B, 6307(7), 2001, pp. 3204

Abstract

Low-temperature structural relaxation in amorphized Ge has been characterized by extended x-ray-absorption fine-structure spectroscopy and Raman spectroscopy. A relaxation-temperature-dependent decrease in the mean value andasymmetry of the interatomic distance distribution has been shown to accompany the well-documented reduction in bond angle distribution. While the initial, as-implanted state of amorphous Ge was ion-dose dependent, relaxation at 200 degreesC yielded a common ion-dose-independent interatomic distance distribution. The heat release upon structural relaxation due to reductions in both bond length and bond angle distortion was calculated separately and the former exhibited an ion-dose dependence. The results provide compelling support for the defect annihilation model of structural relaxation andimply that the heat release upon structural relaxation should be implant-condition dependent.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 28/09/20 alle ore 12:12:27