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Titolo:
Influence of Sn on the optical anisotropy of single-domain Si(001) - art. no. 085317
Autore:
Astropekakis, A; Power, JR; Fleischer, K; Esser, N; Galata, S; Papadimitriou, D; Richter, W;
Indirizzi:
Natl Tech Univ Athens, Dept Chem Engn, GR-15780 Athens, Greece Natl Tech Univ Athens Athens Greece GR-15780 gn, GR-15780 Athens, Greece Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany Tech Univ Berlin Berlin Germany D-10623 perphys, D-10623 Berlin, Germany Aristotelian Univ Salonika, Dept Phys, GR-54006 Salonika, Greece Aristotelian Univ Salonika Salonika Greece GR-54006 006 Salonika, Greece Natl Tech Univ Athens, Dept Phys, GR-15780 Athens, Greece Natl Tech Univ Athens Athens Greece GR-15780 ys, GR-15780 Athens, Greece
Titolo Testata:
PHYSICAL REVIEW B
fascicolo: 8, volume: 6308, anno: 2001,
pagine: 5317 -
SICI:
0163-1829(20010215)6308:8<5317:IOSOTO>2.0.ZU;2-W
Fonte:
ISI
Lingua:
ENG
Soggetto:
REFLECTANCE DIFFERENCE SPECTROSCOPY; MOLECULAR-BEAM EPITAXY; VICINAL SI(001); SI(100) SURFACE; GROWTH; SI(111); SYSTEM; RECONSTRUCTION; ORIENTATION; MORPHOLOGY;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
32
Recensione:
Indirizzi per estratti:
Indirizzo: Power, JR Infineon Technol, TD L,Konigsbrucker Str 180, D-01076 Dresden, Germany Infineon Technol TD L,Konigsbrucker Str 180 Dresden Germany D-01076
Citazione:
A. Astropekakis et al., "Influence of Sn on the optical anisotropy of single-domain Si(001) - art. no. 085317", PHYS REV B, 6308(8), 2001, pp. 5317

Abstract

We apply reflectance anisotropy spectroscopy (RAS) and low-energy electrondiffraction (LEED) to the study of Sn deposited on a single-domain vicinalSi(001) sample. Large variations in RAS are recorded when up to 5 monolayers (ML) of Sn is deposited on the Si substrate at room temperature. We observe (2 x 2) and (1 x 1) LEED patterns for the 0.5-ML and 1.0-ML Sn covered surfaces, respectively. The (1 x 1) LEED pattern exists beyond this coverage and up to 5.0-ML deposition. Even though a(1 x 1) LEED pattern is observed upon deposition of 1.5 ML. surprisingly, a significant optical anisotropyis observed. After annealing to 570 degreesC for 2 min, we observe a progression of LEED pattern changes from c(4 x 4)-->(6 x 2)-->(8 x 4) --> (5 x 1) with increased Sn coverage up to 1.5 ML. Similar RAS line shapes are obtained for all reconstructions produced through annealing with the exception of the (5 x 1). For the (5 x 1) phase, a significant anisotropy appears in the region of 1.8 eV. Similarities in the RAS line, shape for both the (5 x1) phase and that obtained after deposition of 1.5 ML of Sn at room temperature may indicate a RAS sensitivity to Sn dimer orientation within the uppermost layer.

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Documento generato il 02/04/20 alle ore 02:51:40