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Titolo:
Pattern characterization of deep-ultraviolet photoresists by near-field infrared microscopy
Autore:
Dragnea, B; Preusser, J; Szarko, JM; Leone, SR; Hinsberg, WD;
Indirizzi:
Natl Inst Stand & Technol, Dept Chem, Boulder, CO 80309 USA Natl Inst Stand & Technol Boulder CO USA 80309 hem, Boulder, CO 80309 USA Natl Inst Stand & Technol, Dept Phys, JILA, Boulder, CO 80309 USA Natl Inst Stand & Technol Boulder CO USA 80309 ILA, Boulder, CO 80309 USA Univ Colorado, Boulder, CO 80309 USA Univ Colorado Boulder CO USA 80309Univ Colorado, Boulder, CO 80309 USA IBM Corp, Almaden Res Ctr, San Jose, CA 95120 USA IBM Corp San Jose CA USA 95120 p, Almaden Res Ctr, San Jose, CA 95120 USA
Titolo Testata:
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
fascicolo: 1, volume: 19, anno: 2001,
pagine: 142 - 152
SICI:
1071-1023(200101/02)19:1<142:PCODPB>2.0.ZU;2-T
Fonte:
ISI
Lingua:
ENG
Soggetto:
SCANNING OPTICAL MICROSCOPY; INTERFEROMETRIC LITHOGRAPHY; CHEMICAL MICROSCOPY; REFLECTION; ARTIFACTS; FORCE; PROBE;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
--discip_EC--
Citazioni:
37
Recensione:
Indirizzi per estratti:
Indirizzo: Leone, SR Natl Inst Stand & Technol, Dept Chem, Boulder, CO 80309 USA NatlInst Stand & Technol Boulder CO USA 80309 er, CO 80309 USA
Citazione:
B. Dragnea et al., "Pattern characterization of deep-ultraviolet photoresists by near-field infrared microscopy", J VAC SCI B, 19(1), 2001, pp. 142-152

Abstract

Chemical contrast at subwavelength spatial resolution (lambda /10) is achieved using a fiber-based, infrared near-field microscope, at 3 mum wavelength. Chemically amplified polymer photoresists (poly(t-butylmethacrylate)), patterned by ultraviolet radiation and 250 nm thick, are imaged using infrared (TR) wavelengths situated around the OH stretch band of the polymer, a region sensitive to photochemical changes associated with latent image formation. The key technical points that enable near-field infrared absorption measurements down to 0.05% absorption sensitivity are discussed together with the major contrast mechanisms involved in image formation. The measurements are complemented by confirming studies using confocal infrared microscopy and depth profiling. The exposure dose dependence of the acid catalyzed chemistry, after the postexposure bake step, was studied on line/space patterned samples. The OH subgroup absorption maps of the patterned polymer film exhibit features that are not present in the topographical changes (shrinkage) induced by the postexposure polymer chemistry and illustrate significant potential of the IR near-field microscopy as an analytical tool for polymer chemical physics. (C) 2001 American Vacuum Society.

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Documento generato il 20/01/20 alle ore 22:34:47