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Titolo:
Effects of Ge content on the oxidation behavior of poly-Si1-xGex layers for gate electrode application
Autore:
Ahn, TH; Yee, IS; Kim, TK; Joo, MS; Kim, HS; Kim, JJ; Joung, JH; Park, JW;
Indirizzi:
Hyundai Elect Ind Co Ltd, Memory Res & Dev Div, Ichon 467701, Kyoungki Do,South Korea Hyundai Elect Ind Co Ltd Ichon Kyoungki Do South Korea 467701 South Korea
Titolo Testata:
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
fascicolo: 2, volume: 148, anno: 2001,
pagine: G50 - G54
SICI:
0013-4651(200102)148:2<G50:EOGCOT>2.0.ZU;2-F
Fonte:
ISI
Lingua:
ENG
Soggetto:
POLYCRYSTALLINE SIXGE1-X FILMS; SILICON-GERMANIUM ALLOYS; SI1-XGEX FILMS; WET OXIDATION; DEPOSITION; DEPLETION; PRESSURE; PENETRATION; DEVICES; DRY;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
Citazioni:
25
Recensione:
Indirizzi per estratti:
Indirizzo: Ahn, TH Hyundai Elect Ind Co Ltd, Memory Res & Dev Div, Ichon 467701, Kyoungki Do,South Korea Hyundai Elect Ind Co Ltd Ichon Kyoungki Do South Korea467701 rea
Citazione:
T.H. Ahn et al., "Effects of Ge content on the oxidation behavior of poly-Si1-xGex layers for gate electrode application", J ELCHEM SO, 148(2), 2001, pp. G50-G54

Abstract

Oxidation characteristics of nonpatterned and patterned poly-SiGe layers were evaluated to confirm the feasibility for the application of poly-SiGe to the gate electrode. Characterization of poly-SiGe after oxidation was performed using atomic force microscopy, (AFM), X-ray photoelectron spectroscopy (XPS), cross-sectional transmission electron microscopy (TEM), and energy-dispersive X-ray spectroscopy (EDS). The oxide thickness on poly-SiGe layer increased with increasing Ge content, while that on poly-SiGe (Ge 20%) sample was comparable to that of poly-Si (Ge 0%). When the Ge content was mere than 40%, two different oxide layers were observed on poly-SiGe. Intensive analyses revealed that the oxide layers were composed of SiO2-rich mixedoxide (SiO2(GeO2)) and GeO2-rich mixed oxide (GeO2(SiO2)). For the patterned poly-SiGe sample, the oxidation characteristics were similar to those ofnonpatterned sample. The best sidewall oxide profile was obtained in poly-SiGe (Ge 20%) sample. Because the sidewall oxide thickness is too thick forpoly-SiGe sample with more than 40% of Ge, poly-SiGe (Ge 20%) is believed to be the most suitable candidate for gate electrode material. (C) 2001 TheElectrochemical Society. All rights reserved.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 10/04/20 alle ore 02:31:23