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Titolo:
Development of dielectric properties of niobium oxide, tantalum oxide, andaluminum oxide based nanolayered materials
Autore:
Kukli, K; Ritala, M; Leskela, M;
Indirizzi:
Univ Helsinki, Dept Chem, FIN-00014 Helsinki, Finland Univ Helsinki Helsinki Finland FIN-00014 em, FIN-00014 Helsinki, Finland Univ Tartu, Inst Expt Phys & Technol, EE-51010 Tartu, Estonia Univ Tartu Tartu Estonia EE-51010 hys & Technol, EE-51010 Tartu, Estonia
Titolo Testata:
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
fascicolo: 2, volume: 148, anno: 2001,
pagine: F35 - F41
SICI:
0013-4651(200102)148:2<F35:DODPON>2.0.ZU;2-0
Fonte:
ISI
Lingua:
ENG
Soggetto:
ATOMIC LAYER EPITAXY; THIN-FILMS; GATE DIELECTRICS; SOLID-SOLUTION; AL2O3 FILMS; DEPOSITION; GROWTH; CONSTANT; DEPENDENCE; H2O;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
Citazioni:
50
Recensione:
Indirizzi per estratti:
Indirizzo: Kukli, K Univ Helsinki, Dept Chem, FIN-00014 Helsinki, Finland Univ Helsinki Helsinki Finland FIN-00014 0014 Helsinki, Finland
Citazione:
K. Kukli et al., "Development of dielectric properties of niobium oxide, tantalum oxide, andaluminum oxide based nanolayered materials", J ELCHEM SO, 148(2), 2001, pp. F35-F41

Abstract

Nb2O5, Ta2O5, and Al2O3 solid solutions and nanolaminates were grown usingatomic layer deposition technique. Electrical properties of the materials deposited were comparatively characterized be studying the behavior of Al/niobium-aluminum (tantalum) oxide/indium-tin oxide capacitor structures. Thefilms with high Nb content demonstrated high polarizability and leakage current density. The films with high Al content demonstrated low leakage current densities. The leakage currents in Nb-based films were reduced by depositing thin alternate layers of Al2O3 Or Ta2O5 and Nb2O5, thereby increasingthe number of interfaces between distinct oxide layers. The permittivity of Nb2O5:Al2O3 films could be increased with Nb2O5 concentration without considerable loss in resistivity. (C) 2001 The Electrochemical Society. All rights reserved.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 01/10/20 alle ore 15:56:30