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Titolo:
FORMATION AND GROWTH OF POROUS SILICON
Autore:
VADJIKAR RM; NATH AK; CHANDORKAR AN;
Indirizzi:
CTR ADV TECHNOL INDORE 452013 INDIA INDIAN INST TECHNOL BOMBAY 400076 MAHARASHTRA INDIA
Titolo Testata:
Nanostructured materials
fascicolo: 4, volume: 8, anno: 1997,
pagine: 507 - 520
SICI:
0965-9773(1997)8:4<507:FAGOPS>2.0.ZU;2-A
Fonte:
ISI
Lingua:
ENG
Soggetto:
DIFFUSION-LIMITED AGGREGATION; COMPUTER-SIMULATIONS; MODEL;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
26
Recensione:
Indirizzi per estratti:
Citazione:
R.M. Vadjikar et al., "FORMATION AND GROWTH OF POROUS SILICON", Nanostructured materials, 8(4), 1997, pp. 507-520

Abstract

The conformal hullfinite diffusion length model (FDL) simulates pore formation and growth in silicon by launching particles from an isoconcentration profile. Several features of the aggregation patterns generated by this model resemble experimentally observed morphology of porous silicon. In this paper we consider silicon atom dissolution by a twoparticle aggregation algorithm. The probabilities of site occupation have been assigned based on the local electric field. The release probability of particles has been considered to be proportional to the electric field. The incorporation of these factors generates aggregation patterns which are similar to those generated by other similar models. We suggest that such modifications generate aggregation patterns thatare representative of porous silicon morphology. (C) 1997 Acta Metallurgica Inc.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 01/12/20 alle ore 13:42:11