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Titolo:
Pressure dependence of the birefringence in AgGaS2
Autore:
Nakanishi, M; Yamamoto, S; Matsuhashi, T; Goshima, D; Nakahara, J;
Indirizzi:
Hokkaido Univ, Dept Phys, Sapporo, Hokkaido 0600810, Japan Hokkaido Univ Sapporo Hokkaido Japan 0600810 oro, Hokkaido 0600810, Japan
Titolo Testata:
PHYSICA STATUS SOLIDI B-BASIC RESEARCH
fascicolo: 1, volume: 223, anno: 2001,
pagine: 325 - 329
SICI:
0370-1972(200101)223:1<325:PDOTBI>2.0.ZU;2-O
Fonte:
ISI
Lingua:
ENG
Soggetto:
CHALCOPYRITE SEMICONDUCTORS; BAND;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Citazioni:
10
Recensione:
Indirizzi per estratti:
Indirizzo: Nakanishi, M Hokkaido Univ, Dept Phys, N10W8, Sapporo, Hokkaido 0600810, Japan Hokkaido Univ N10W8 Sapporo Hokkaido Japan 0600810 810, Japan
Citazione:
M. Nakanishi et al., "Pressure dependence of the birefringence in AgGaS2", PHYS ST S-B, 223(1), 2001, pp. 325-329

Abstract

We measured the pressure dependence of polarized transmission spectra on AgGaS2 at 2 K. These spectra show an oscillatory behavior around the zero-birefringence energy E-0 where the ordinal and extraordinal refractive indices coincide. Using this oscillation we determined E-0 under hydrostatic pressures. From the difference of pressure dependences of E-0 and the energy gap for the upper valence band, it is expected that the pressure dependence of the energy gap for the next valence bands is smaller than that fur the upper one. Thus the tetragonal crystal field splitting decreases with increasing pressure. We discuss it in terms of p-d hybridization in the valence bands.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 06/04/20 alle ore 05:41:20