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Titolo:
Wurtzite silicon nanocrystals deposited by the cluster-beam evaporation technique
Autore:
Zhang, JY; Ono, H; Uchida, K; Nozaki, S; Morisaki, H;
Indirizzi:
Univ Electrocommun, Dept Elect Engn, Tokyo 1828585, Japan Univ Electrocommun Tokyo Japan 1828585 Elect Engn, Tokyo 1828585, Japan
Titolo Testata:
PHYSICA STATUS SOLIDI B-BASIC RESEARCH
fascicolo: 1, volume: 223, anno: 2001,
pagine: 41 - 45
SICI:
0370-1972(200101)223:1<41:WSNDBT>2.0.ZU;2-Q
Fonte:
ISI
Lingua:
ENG
Soggetto:
RAMAN MICROSPECTROSCOPY; PHASE-TRANSFORMATIONS; AMBIENT PRESSURE; AMORPHOUS PHASES; SI; GE; CRYSTALLINE; DENSITY; STATES; SHAPE;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Citazioni:
20
Recensione:
Indirizzi per estratti:
Indirizzo: Zhang, JY Univ Electrocommun, Dept Elect Engn, 1-5-1 Chofugaoka, Tokyo 1828585, Japan Univ Electrocommun 1-5-1 Chofugaoka Tokyo Japan 1828585 , Japan
Citazione:
J.Y. Zhang et al., "Wurtzite silicon nanocrystals deposited by the cluster-beam evaporation technique", PHYS ST S-B, 223(1), 2001, pp. 41-45

Abstract

Wurtzite silicon nanocrystals have been fabricated by using the cluster-beam evaporation technique, The X-ray diffraction patterns of the as-deposited films indicate the presence of Si crystallites with sizes in the nanometer range. The Bragg angles of the reflection peaks are not of the ordinary diamond structure but of the wurtzite structure. The Raman spectra further support the presence of the wurtzite structure. X-ray photoelectron spectroscopy shows that these Si nanocrystals are enclosed in the oxide matrix. It is hypothesized that the wurtzite Si phase is formed by the non-equilibriumcluster formation process through adiabatic gaseous expansion.

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Documento generato il 25/09/20 alle ore 20:33:23