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Titolo:
High-pressure high-temperature studies of structural ordering in GaSb
Autore:
Vanpeteghem, CB; Nelmes, RJ; Allan, DR; McMahon, MI; Sapelkin, AV; Bayliss, SC;
Indirizzi:
Univ Edinburgh, Dept Phys & Astron, Edinburgh EH9 3JZ, Midlothian, Scotland Univ Edinburgh Edinburgh Midlothian Scotland EH9 3JZ Midlothian, Scotland De Montfort Univ, Solid State Res Ctr, Leicester LE1 9BH, Leics, England De Montfort Univ Leicester Leics England LE1 9BH LE1 9BH, Leics, England
Titolo Testata:
PHYSICA STATUS SOLIDI B-BASIC RESEARCH
fascicolo: 2, volume: 223, anno: 2001,
pagine: 405 - 409
SICI:
0370-1972(200101)223:2<405:HHSOSO>2.0.ZU;2-0
Fonte:
ISI
Lingua:
ENG
Soggetto:
TRANSITIONS; PHASE;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Citazioni:
18
Recensione:
Indirizzi per estratti:
Indirizzo: Vanpeteghem, CB Univ Edinburgh, Dept Phys & Astron, Mayfield Rd, EdinburghEH9 3JZ, Midlothian, Scotland Univ Edinburgh Mayfield Rd Edinburgh Midlothian Scotland EH9 3JZ
Citazione:
C.B. Vanpeteghem et al., "High-pressure high-temperature studies of structural ordering in GaSb", PHYS ST S-B, 223(2), 2001, pp. 405-409

Abstract

Both angle-dispersive and EXAFS experiments have been carried out to investigate the: structural ordering or the high-pressure (hp) and high-pressurehigh-temperature (hp/ht) phases of GaSb. The diffraction patterns ol;lll the different phases of GaSb have shown an absence of long-range order, while the: EXAFS studies have demonstrated the lack of complete short-range order. GaSb is the only semiconductor compound among the III-V and II-VI systems to present such behaviour in all of its different hp and hp/ht phases.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 21/09/20 alle ore 04:38:29