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Titolo:
A monolithic active pixel sensor for charged particle tracking and imagingusing standard VLSI CMOS technology
Autore:
Turchetta, R; Berst, JD; Casadei, B; Claus, G; Colledani, C; Dulinski, W; Hu, Y; Husson, D; Le Normand, JP; Riester, JL; Deptuch, G; Goerlach, U; Higueret, S; Winter, M;
Indirizzi:
ULP, IN2P3, LEPSI, F-67037 Strasbourg, France ULP Strasbourg France F-67037 , IN2P3, LEPSI, F-67037 Strasbourg, France ULP, IN2P3, IReS, F-67037 Strasbourg, France ULP Strasbourg France F-67037 P, IN2P3, IReS, F-67037 Strasbourg, France
Titolo Testata:
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
fascicolo: 3, volume: 458, anno: 2001,
pagine: 677 - 689
SICI:
0168-9002(20010211)458:3<677:AMAPSF>2.0.ZU;2-A
Fonte:
ISI
Lingua:
ENG
Soggetto:
DETECTOR;
Keywords:
solid-state detectors; low noise; CMOS; imaging; pixel;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
Citazioni:
21
Recensione:
Indirizzi per estratti:
Indirizzo: Turchetta, R Rutherford Appleton Lab, Didcot OX11 0QX, Oxon, England Rutherford Appleton Lab Didcot Oxon England OX11 0QX England
Citazione:
R. Turchetta et al., "A monolithic active pixel sensor for charged particle tracking and imagingusing standard VLSI CMOS technology", NUCL INST A, 458(3), 2001, pp. 677-689

Abstract

A novel Monolithic Active Pixel Sensor (MAPS) for charged particle tracking made in a standard CMOS technology is proposed. The sensor is a photodiode, which is readily available in a CMOS technology. The diode has a specialstructure, which allows the high detection efficiency required for tracking applications. The partially depleted thin epitaxial silicon layer is usedas a sensitive detector volume. Semiconductor device simulation, using either ToSCA based or 3-D ISE-TCAD software packages shows that the charge collection is efficient: reasonably fast (order of 100 ns), and the charge spreading limited to a few pixels only. A first prototype has been designed, fabricated and tested. It is made of four arrays each containing 64 x 64 pixels, with a readout pitch of 20 mum in both directions. The device is fabricated using standard submicron 0.6 mum CMOS process, which features twin-tub implanted in a p-type epitaxial layer, a characteristic common to many modern CMOS VLSI processes. Extensive tests made with soft X-ray source (Fe-55) and minimum ionising particles (15 GeV/c pions) fully demonstrate the predicted performances, with the individual pixel noise (ENC) below 20 electrons and the Signal-to-Noise ratio for both 5.9 keV X-rays and Minimum Ionising Particles (MIP) of the order of 30. This novel device opens new perspectives in high-precision vertex detectors in Particle Physics experiments, as well as in other application,like low-energy beta particle imaging, visible light single photon imaging (using the Hybrid Photon Detector approach) and high-precision slow neutron imaging. (C) 2001 Elsevier Science B.V. Allrights reserved.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 02/12/20 alle ore 04:37:25