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Titolo:
Synthesis of low-dielectric silica aerogel films by ambient drying
Autore:
Kim, GS; Hyun, SH; Park, HH;
Indirizzi:
Yonsei Univ, Coll Engn, Sch Mat Sci & Engn, Seoul 120749, South Korea Yonsei Univ Seoul South Korea 120749 i & Engn, Seoul 120749, South Korea
Titolo Testata:
JOURNAL OF THE AMERICAN CERAMIC SOCIETY
fascicolo: 2, volume: 84, anno: 2001,
pagine: 453 - 455
SICI:
0002-7820(200102)84:2<453:SOLSAF>2.0.ZU;2-Y
Fonte:
ISI
Lingua:
ENG
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
Citazioni:
9
Recensione:
Indirizzi per estratti:
Indirizzo: Kim, GS Yonsei Univ, Coll Engn, Sch Mat Sci & Engn, Seoul 120749, South Korea Yonsei Univ Seoul South Korea 120749 , Seoul 120749, South Korea
Citazione:
G.S. Kim et al., "Synthesis of low-dielectric silica aerogel films by ambient drying", J AM CERAM, 84(2), 2001, pp. 453-455

Abstract

A new ambient drying process that is simple, effective, and reproducible has been developed to synthesize low-k SiO2 aerogel thin films for intermetal dielectric (IMD) materials. The SiO2 aerogel films having a thickness of 9500 Angstrom, a high porosity of 79.5%, and a low dielectric constant of 2.0 were obtained by a new ambient drying process using n-heptane as a drying solvent.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 13/07/20 alle ore 14:55:43