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Titolo:
Epitaxial growth of LiNbO3 thin films using pulsed laser deposition
Autore:
Kakehi, Y; Okamato, A; Sakurai, Y; Nishikawa, Y; Yotsuya, T; Ogawa, S;
Indirizzi:
Technol Res Inst Osaka Prefecture, Izumi, Osaka 5941157, Japan Technol ResInst Osaka Prefecture Izumi Osaka Japan 5941157 941157, Japan Osaka Sci & Technol Ctr, Izumi, Osaka 5941157, Japan Osaka Sci & Technol Ctr Izumi Osaka Japan 5941157 i, Osaka 5941157, Japan
Titolo Testata:
APPLIED SURFACE SCIENCE
, volume: 169, anno: 2001,
pagine: 560 - 563
SICI:
0169-4332(20010115)169:<560:EGOLTF>2.0.ZU;2-S
Fonte:
ISI
Lingua:
ENG
Soggetto:
LITHIUM-NIOBATE; SAPPHIRE;
Keywords:
LiNbO3 thin film; pulsed laser deposition; epitaxial growth; oxygen radical; laser fluence; re-evaporation of Li atoms;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
Citazioni:
12
Recensione:
Indirizzi per estratti:
Indirizzo: Kakehi, Y Technol Res Inst Osaka Prefecture, Ayumino 2-7-1, Izumi, Osaka 5941157, Japan Technol Res Inst Osaka Prefecture Ayumino 2-7-1 Izumi Osaka Japan 5941157
Citazione:
Y. Kakehi et al., "Epitaxial growth of LiNbO3 thin films using pulsed laser deposition", APPL SURF S, 169, 2001, pp. 560-563

Abstract

An epitaxial lithium niobate (LiNbO3) thin film was successfully fabricated on an alpha -Al2O3(0 0 0 1) substrate using a pulsed laser deposition method and me effect of laser fluence on film quality was investigated. The Liconcentration in a deposited Sim was largely influenced by oxygen radicals, which were produced not only by the interaction between the incident excimer laser and the oxygen but also by an rf-radical source: The re-evaporation of Li atoms in the film was suppressed by the oxidation of Li atoms. (C)2001 Elsevier Science B.V. All rights reserved.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 27/09/20 alle ore 06:35:55