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Titolo:
STM study of structural changes on Si(100)2 x 1-Sb surface induced by atomic hydrogen
Autore:
Kubo, O; Ryu, JT; Tani, H; Harada, T; Kobayashi, T; Katayama, M; Oura, K;
Indirizzi:
Osaka Univ, Fac Engn, Dept Elect Engn, Suita, Osaka 5650871, Japan Osaka Univ Suita Osaka Japan 5650871 ct Engn, Suita, Osaka 5650871, Japan
Titolo Testata:
APPLIED SURFACE SCIENCE
, volume: 169, anno: 2001,
pagine: 93 - 99
SICI:
0169-4332(20010115)169:<93:SSOSCO>2.0.ZU;2-7
Fonte:
ISI
Lingua:
ENG
Soggetto:
SCANNING-TUNNELING-MICROSCOPY; ENERGY ION-SCATTERING; AG CLUSTER FORMATION; SI(111) SURFACES; SI(100)-(2X1)-SB SURFACE; EPITAXIAL-GROWTH; MEDIATED EPITAXY; SI(001); SB; SPECTROSCOPY;
Keywords:
silicon; antimony; hydrogen; scanning tunneling microscopy (STM); incorporation; desorption; line structure;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
Citazioni:
27
Recensione:
Indirizzi per estratti:
Indirizzo: Kubo, O Osaka Univ, Fac Engn, Dept Elect Engn, 2-2 Yamadaoka, Suita, Osaka5650871, Japan Osaka Univ 2-2 Yamadaoka Suita Osaka Japan 5650871 5650871, Japan
Citazione:
O. Kubo et al., "STM study of structural changes on Si(100)2 x 1-Sb surface induced by atomic hydrogen", APPL SURF S, 169, 2001, pp. 93-99

Abstract

Using scanning tunneling microscopy (STM) and low energy electron diffraction (LEED), we have studied the structural changes of the Si(100)2 x 1-Sb surface caused by hydrogen adsorption at both room temperature (RT) and 300 degreesC. We have found that the ordering of a 2 x 1-Sb surface is more stable against atomic hydrogen exposure at 300 degreesC than at RT. and that some Sb atoms desorb during atomic hydrogen exposure at 300 degreesC. However, upon hydrogen exposure at both temperatures, we have observed neither three-dimensional islands nor the hydrogen terminated Si substrate which werereported for hydrogen interaction with the other metal/Si systems. On the 2 x 1-Sb surface exposed to atomic hydrogen of 1000 L at RT followed by 550degreesC annealing, long bright lines similar to those reported for the Bi/Si(100) system have also been found. (C) 2001 Elsevier Science B.V. All rights reserved.

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Documento generato il 06/04/20 alle ore 01:12:29