Catalogo Articoli (Spogli Riviste)

OPAC HELP

Titolo:
Interference enhanced Raman scattering of hydrogenated amorphous silicon revisited
Autore:
Gupta, S; Morell, G; Katiyar, RS; Abelson, JR; Jin, HC; Balbert, I;
Indirizzi:
Univ Puerto Rico, Dept Phys, San Juan, PR 00931 USA Univ Puerto Rico San Juan PR USA 00931 Dept Phys, San Juan, PR 00931 USA Univ Illinois, Dept Mat Sci & Engn, Urbana, IL USA Univ Illinois Urbana IL USA llinois, Dept Mat Sci & Engn, Urbana, IL USA Racah Inst Phys, IL-91794 Jerusalem, Israel Racah Inst Phys Jerusalem Israel IL-91794 ys, IL-91794 Jerusalem, Israel
Titolo Testata:
JOURNAL OF RAMAN SPECTROSCOPY
fascicolo: 1, volume: 32, anno: 2001,
pagine: 23 - 25
SICI:
0377-0486(200101)32:1<23:IERSOH>2.0.ZU;2-F
Fonte:
ISI
Lingua:
ENG
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Citazioni:
8
Recensione:
Indirizzi per estratti:
Indirizzo: Morell, G Univ Puerto Rico, Dept Phys, POB 23343, San Juan, PR 00931 USA Univ Puerto Rico POB 23343 San Juan PR USA 00931 n, PR 00931 USA
Citazione:
S. Gupta et al., "Interference enhanced Raman scattering of hydrogenated amorphous silicon revisited", J RAMAN SP, 32(1), 2001, pp. 23-25

Abstract

We report interference enhanced Raman scattering (IERS) of very thin and highly absorbing (alpha > 10(5) cm(-1)) device-quality hydrogenated amorphous silicon (a-Si:H) films. The IERS technique, in general, can give a gain of 10-10(3), depending on the optical constants of the material. The potential of this method is demonstrated experimentally using device-quality a-Si:H films at a wavelength of 514 nm. IERS is shown to produce an intensity gain (G) of 50 in the scattered intensity of a thin (19 nm) a-Si:H film as compared with the poor signal obtained for a thick specimen (1 mum) using conventional Raman scattering in backscattering configuration. The TA- and TO-like signatures of the enhanced spectra stand out clearly, thus being suitable for the structural characterization of this material. It is also shown that the intensity enhancement effect decreases when the incident radiationwavelength is changed to 604 nm, thus deviating from the required interference condition. IERS can have important applications in the study of many materials, such as metals, metallic alloys, semiconductors and surface adsorbates. Copyright (C) 2001 John Wiley & Sons, Ltd.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 15/07/20 alle ore 19:53:28