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Titolo:
Atomic force microscope probe tips using heavily boron-doped silicon cantilevers realized in a (110) bulk silicon wafer
Autore:
Cho, IJ; Park, EC; Hong, S; Yoon, E;
Indirizzi:
Korea Adv Inst Sci & Technol, Dept Elect Engn & Comp Sci, Taejon 305701, South Korea Korea Adv Inst Sci & Technol Taejon South Korea 305701 5701, South Korea
Titolo Testata:
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
fascicolo: 12B, volume: 39, anno: 2000,
pagine: 7103 - 7107
SICI:
0021-4922(200012)39:12B<7103:AFMPTU>2.0.ZU;2-C
Fonte:
ISI
Lingua:
ENG
Keywords:
AFM; SPM heavily boron-doped; cantilever; fabrication of AFM; tip; probe tip; EDP; (110) wafer;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
7
Recensione:
Indirizzi per estratti:
Indirizzo: Cho, IJ Korea Adv Inst Sci & Technol, Dept Elect Engn & Comp Sci, 373-1 Kusong Dong, Taejon 305701, South Korea Korea Adv Inst Sci & Technol 373-1 Kusong Dong Taejon South Korea 305701
Citazione:
I.J. Cho et al., "Atomic force microscope probe tips using heavily boron-doped silicon cantilevers realized in a (110) bulk silicon wafer", JPN J A P 1, 39(12B), 2000, pp. 7103-7107

Abstract

A new method of fabricating atomic force microscope (AFM) probe tip is presented. In this process, the probe tips were implemented using self-alignedheavily boron-doped silicon cantilevers in a [110] bulk silicon wafer. In this structure, a stress-fi ee cantilever can be easily defined by selective etch stop by the heavily boron-doped region in an anisotropic silicon etchant. The proposed tips do not require expensive silicon on insulator (SOI)wafers and double-side alignment. The probe tip dimensions can be exactly defined regardless of wafer thickness by the self-aligned etch from the front side. In addition: the cantilever thickness can be easily controlled by adjusting the diffusion time, and fabricated at low cost by using bulk silicon wafers. The fabricated probe tips showed resonant frequencies of 71.420kHz with a 1.8-mum-thick probe tip and 122.660 kHz with a 3.0-mum-thick probe tip. Using the two fabricated probe tips, we successfully demonstrate image scanning of a 1 mum grating reference sample in contact and noncontactmodes, respectively.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 05/04/20 alle ore 13:35:46