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Titolo:
Initial oxidation of Si(001) induced by the translational kinetic energy of O-2 supersonic molecular beams
Autore:
Yoshigoe, A; Sano, M; Teraoka, Y;
Indirizzi:
Japan Atom Energy Res Inst, Synchrotron Radiat Res Ctr, Mikazuki, Hyogo 6795148, Japan Japan Atom Energy Res Inst Mikazuki Hyogo Japan 6795148 go 6795148, Japan
Titolo Testata:
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
fascicolo: 12B, volume: 39, anno: 2000,
pagine: 7026 - 7030
SICI:
0021-4922(200012)39:12B<7026:IOOSIB>2.0.ZU;2-Q
Fonte:
ISI
Lingua:
ENG
Soggetto:
X-RAY BEAMLINE; SI(100); OXYGEN; SURFACES; SI(111); STICKING;
Keywords:
Si(001) oxidation; translational kinetic energy; supersonic molecular beam; X-ray photoemission spectroscopy (XPS); O-2 molecular scattering; desorbed SiO; potential energy barrier;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
14
Recensione:
Indirizzi per estratti:
Indirizzo: Yoshigoe, A Japan Atom Energy Res Inst, Synchrotron Radiat Res Ctr, 1-1-1 Kouto, Mikazuki, Hyogo 6795148, Japan Japan Atom Energy Res Inst 1-1-1 Kouto Mikazuki Hyogo Japan 6795148
Citazione:
A. Yoshigoe et al., "Initial oxidation of Si(001) induced by the translational kinetic energy of O-2 supersonic molecular beams", JPN J A P 1, 39(12B), 2000, pp. 7026-7030

Abstract

The influence of the variation of up to 3.0eV in the incident translational kinetic energy of O-2 (E-t) on the chemisorption of O-2 onto Si(001) surfaces was studied by using the supersonic molecular beam (SSMB), X-ray photoemission spectroscopy (XPS), O-2 molecular scattering and desorbed SiO detection techniques. Under passive oxidation conditions at room temperature, the amount of saturated oxygen on the Si(001) surface was enhanced in concomitant with an increase in the translational kinetic energy of O-2 Thresholdenergies, corresponding to potential energy barriers for the direct oxidation reaction, are clearly observed at E-t = 1.0 eV and E-t = 2.6 eV. These threshold energies have been assigned to backbond oxidation of the Si dimeratoms and oxidation between the second and the third Si layers, respectively. Futhermore, at substrate temperature of 700 degreesC, the relative desorption rate of SiO was increased when the translational kinetic energy of O-2 was greater than E-t = 1.0eV. These results suggest that the oxidized Sidimer backbond is the precursor for the desorbed SiO.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 01/10/20 alle ore 05:46:39