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Titolo:
Redistribution of Ni implanted into InP
Autore:
Chini, TK; Ghose, SK; Rout, B; Dev, BN; Tanemura, M; Okuyama, F;
Indirizzi:
Saha Inst Nucl Phys, Calcutta 700064, W Bengal, India Saha Inst Nucl PhysCalcutta W Bengal India 700064 00064, W Bengal, India Inst Phys, Bhubaneswar 751005, Orissa, India Inst Phys Bhubaneswar OrissaIndia 751005 ubaneswar 751005, Orissa, India Nagoya Inst Technol, Grad Sch Engn, Showa Ku, Nagoya, Aichi 466, Japan Nagoya Inst Technol Nagoya Aichi Japan 466 a Ku, Nagoya, Aichi 466, Japan
Titolo Testata:
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS
fascicolo: 2, volume: 13, anno: 2001,
pagine: 83 - 87
SICI:
1286-0042(200102)13:2<83:RONIII>2.0.ZU;2-E
Fonte:
ISI
Lingua:
ENG
Soggetto:
FE; LAYERS; DAMAGE; GAAS;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Citazioni:
17
Recensione:
Indirizzi per estratti:
Indirizzo: Chini, TK Saha Inst Nucl Phys, 1 AF Bidhannagar, Calcutta 700064, W Bengal, India Saha Inst Nucl Phys 1 AF Bidhannagar Calcutta W Bengal India 700064
Citazione:
T.K. Chini et al., "Redistribution of Ni implanted into InP", EPJ-APPL PH, 13(2), 2001, pp. 83-87

Abstract

The redistribution of Ni in InP is studied by annealing samples of InP implanted with 0.9 MeV Ni at 60 degrees angle of ion incidence with respect totarget surface normal as a function of dose (8.5 x 10(12)-4.5 x 10(15) cm(2)). Ni profiles are measured by secondary ion mass spectrometry (SIMS) andimplantation induced damage by Rutherford backscattering spectrometry in channeling (RBS/C) condition. The highest dose sample is characterised by remarkable Ni accumulation near the surface (at similar to 0:3R(np)) that hasnot been observed earlier along with two other distinct accumulation zonesat R-np+DeltaR(np) and 2:2R(np) after annealing at 650 degreesC for 30 min. Here, R-np is the normal component of the projected range for oblique angle bombardment.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 10/07/20 alle ore 08:15:38