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Titolo:
Atomic layer-by-layer MOCVD of complex metal oxides and in situ process monitoring
Autore:
Yamamoto, S; Oda, S;
Indirizzi:
Tokyo Inst Technol, Res Ctr Quantum Effect Elect, Meguro Ku, Tokyo 1528552, Japan Tokyo Inst Technol Tokyo Japan 1528552 , Meguro Ku, Tokyo 1528552, Japan
Titolo Testata:
CHEMICAL VAPOR DEPOSITION
fascicolo: 1, volume: 7, anno: 2001,
pagine: 7 - 18
SICI:
0948-1907(200101)7:1<7:ALMOCM>2.0.ZU;2-H
Fonte:
ISI
Lingua:
ENG
Soggetto:
CHEMICAL-VAPOR-DEPOSITION; SUPERCONDUCTING THIN-FILMS; 2-DIMENSIONAL CRYSTAL-GROWTH; FIELD-EFFECT DEVICES; TEMPERATURE-DEPENDENCE; YBA2CU3O7-DELTA FILMS; ELECTRICAL-PROPERTIES; OPTICAL-REFLECTANCE; SPECTROSCOPIC ELLIPSOMETRY; DIELECTRIC FUNCTION;
Keywords:
atomic layer-by-layer MOCVD; in situ growth monitoring; oxide superconductors; precursor concentration monitoring; spectroscopic ellipsometry;
Tipo documento:
Review
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
Citazioni:
91
Recensione:
Indirizzi per estratti:
Indirizzo: Yamamoto, S Tokyo Inst Technol, Res Ctr Quantum Effect Elect, Meguro Ku, 2-12-1 Ookayama, Tokyo 1528552, Japan Tokyo Inst Technol 2-12-1 Ookayama Tokyo Japan 1528552 Japan
Citazione:
S. Yamamoto e S. Oda, "Atomic layer-by-layer MOCVD of complex metal oxides and in situ process monitoring", CHEM VAPOR, 7(1), 2001, pp. 7-18

Abstract

The progress of atomic layer-by-layer metal-organic (MO) CVD of complex metal oxides and related growth technologies is reviewed. Atomic layer-by-layer MOCVD produces thin films of complex metal oxides that are of high crystalline quality, with a very smooth surface. These features allow us to fabricate modulated structures on an atomic scale, such as delta -doping, superlattice structure, and heterostructures. A common problem of oxide MOCVD ispoor controllability of the growth conditions, mainly caused by instability of precursor supply. To overcome this problem, new precursors have been developed, and in situ process monitoring, using an ultrasonic transducer and spectroscopic ellipsometry, is applied during the MOCVD process. The reproducibility of MOCVD growth has been improved significantly.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 03/04/20 alle ore 10:31:52