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Titolo:
Electrical and photovoltaic properties of iron-silicide/silicon heterostructures formed by pulsed laser deposition
Autore:
Liu, ZX; Watanabe, M; Hanabusa, M;
Indirizzi:
Toyohashi Univ Technol, Dept Elect & Elect Engn, Tenpa Ku, Toyohashi, Aichi 4418580, Japan Toyohashi Univ Technol Toyohashi Aichi Japan 4418580 Aichi 4418580, Japan
Titolo Testata:
THIN SOLID FILMS
fascicolo: 2, volume: 381, anno: 2001,
pagine: 262 - 266
SICI:
0040-6090(20010115)381:2<262:EAPPOI>2.0.ZU;2-9
Fonte:
ISI
Lingua:
ENG
Soggetto:
THIN-FILMS; BETA-FESI2; ABSORPTION; SILICON; FESI2;
Keywords:
pulsed laser deposition; iron silicide; iron-silicide/silicon heterostructure; current-voltage characteristics; solar cell;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
Citazioni:
14
Recensione:
Indirizzi per estratti:
Indirizzo: Hanabusa, M Toyohashi Univ Technol, Dept Elect & Elect Engn, Tenpa Ku, Toyohashi, Aichi 4418580, Japan Toyohashi Univ Technol Toyohashi Aichi Japan 4418580 0, Japan
Citazione:
Z.X. Liu et al., "Electrical and photovoltaic properties of iron-silicide/silicon heterostructures formed by pulsed laser deposition", THIN SOL FI, 381(2), 2001, pp. 262-266

Abstract

Dark current-voltage characteristic showed a rectifying behavior for the iron-silicide/silicon heterostructures formed by pulsed laser deposition of iron on n-type silicon(100) substrates heated to 600 degreesC. The polarityof the rectifier was reversed for the heterostructures formed at 800 degreesC. The photosensitivity measured between 300 nm and 1100 nm was higher for the heterostructures formed at 800 degreesC than those at 600 degreesC. Also, the illumination of the silicon side gave higher photosensitivity thanthat of the silicide side. There were peaks near a wavelength of 1000 nm. In particular, the FeSi2/Si heterostructures formed at 800 degreesC was themost sensitive (270 mA/W at a broad peak near 900 nm) with the spectrum extending from 400 nm to 1100 nm under the illumination of the silicon side. Open-circuit voltage, as well as short-circuit current density, was measured under AM 1.5, 100 mW/cm(2) illumination. (C) 2001 Elsevier Science B.V. All rights reserved.

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Documento generato il 10/07/20 alle ore 12:51:48