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Titolo:
Impact of internal electric field and localization effect on quantum well excitons in AlGaN/GaN/InGaN light emitting diodes
Autore:
Chichibu, SF; Sota, T; Wada, K; Brandt, O; Ploog, KH; DenBaars, SP; Nakamura, S;
Indirizzi:
Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3058573, Japan Univ Tsukuba Tsukuba Ibaraki Japan 3058573 sukuba, Ibaraki 3058573, Japan Waseda Univ, Dept Elect Elect & Comp Engn, Shinju Ku, Tokyo 1698555, JapanWaseda Univ Tokyo Japan 1698555 mp Engn, Shinju Ku, Tokyo 1698555, Japan MIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USA MIT Cambridge MA USA 02139 , Dept Mat Sci & Engn, Cambridge, MA 02139 USA Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany Paul Drude Inst Festkorperelekt Berlin Germany D-10117 7 Berlin, Germany Univ Calif Santa Barbara, Dept Mat Engn, Santa Barbara, CA 93106 USA Univ Calif Santa Barbara Santa Barbara CA USA 93106 Barbara, CA 93106 USA Nichia Chem Ind Ltd, Dept Res & Dev, Tokushima 7748601, Japan Nichia Chem Ind Ltd Tokushima Japan 7748601 ev, Tokushima 7748601, Japan
Titolo Testata:
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
fascicolo: 1, volume: 183, anno: 2001,
pagine: 91 - 98
SICI:
0031-8965(200101)183:1<91:IOIEFA>2.0.ZU;2-4
Fonte:
ISI
Lingua:
ENG
Soggetto:
PIEZOELECTRIC FIELDS; SPONTANEOUS-EMISSION; OPTICAL-PROPERTIES; BAND-GAP; SEMICONDUCTORS; MECHANISMS; SPECTRA; ALLOYS; SHIFT; GAINN;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Citazioni:
31
Recensione:
Indirizzi per estratti:
Indirizzo: Chichibu, SF Univ Tsukuba, Inst Appl Phys, 1-1-1 Tennodai, Tsukuba, Ibaraki 3058573, Japan Univ Tsukuba 1-1-1 Tennodai Tsukuba Ibaraki Japan 3058573 pan
Citazione:
S.F. Chichibu et al., "Impact of internal electric field and localization effect on quantum well excitons in AlGaN/GaN/InGaN light emitting diodes", PHYS ST S-A, 183(1), 2001, pp. 91-98

Abstract

Strained InxGa1-xN quantum wells (QWs) on thick GaN base layers were investigated to verify the importance of localized QW excitons in their spontaneous emission mechanisms. A strength of the internal piezoelectric field (F-PZ) across the QW increases with increasing x up to 1.4 MV/cm for x = 0.25,since the in-plain strain increases. For the QWs with the well thickness Lgreater than 3 nm, F-PZ dominates the emission peak energy due to the quantum-confined Stark effect. Absorption spectra of both hexagonal and cubic InGaN QWs exhibited a broad band-tail regardless of the presence of F-PZ normal to the QW plane. The luminescence peak energy of the 3 nm thick QWs washigher than the bandgap energy of the unstrained bulk crystal for x < 0.15, showing that doping of Si in barriers or injection of carriers effectively screens the field. The emission lifetime increased with increasing monitoring wavelength. Also, a temperature-induced change in the luminescence peak energy decreased with increasing x. The real-space variation of the luminescence peak energy was confirmed by the spatially-resolved monochromatic cathodoluminescence mapping method. The localization depth increases with increasing x. The carrier localization is confirmed to originate from the effective bandgap inhomogeneity due to a fluctuation of the local InN mole fraction, which is enhanced by the large and composition-dependent bowing parameter of InGaN material.

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Documento generato il 09/04/20 alle ore 19:03:05