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Titolo:
Effects of backgate voltage on electrical characteristics of poly-Si thin film transistors fabricated on stainless-steel substrate
Autore:
Serikawa, T; Omata, F;
Indirizzi:
NTT, Cyber Space Labs, Musashino, Tokyo 1800012, Japan NTT Musashino Tokyo Japan 1800012 e Labs, Musashino, Tokyo 1800012, Japan
Titolo Testata:
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
fascicolo: 12B, volume: 39, anno: 2000,
pagine: L1277 - L1279
SICI:
0021-4922(200012)39:12B<L1277:EOBVOE>2.0.ZU;2-9
Fonte:
ISI
Lingua:
ENG
Soggetto:
LEAKAGE CURRENT;
Keywords:
polycrystalline silicon; thin film transistors; backgate voltage; stainless-steel substrates; sputtering; threshold voltage; subthreshold slope;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
9
Recensione:
Indirizzi per estratti:
Indirizzo: Serikawa, T NTT Elect Corp, 394-1 Onna, Atsugi, Kanagawa 2430032, Japan NTT Elect Corp 394-1 Onna Atsugi Kanagawa Japan 2430032 Japan
Citazione:
T. Serikawa e F. Omata, "Effects of backgate voltage on electrical characteristics of poly-Si thin film transistors fabricated on stainless-steel substrate", JPN J A P 2, 39(12B), 2000, pp. L1277-L1279

Abstract

High mobility p-channel polycrystalline Si thin film transistors (poly-Si TFTs) are fabricated on flexible stainless-steel substrates coated with 500-nm-thick SiO2 and 50-nm-thick SiN films. The electrical characteristics ofmobility, threshold voltage and subthreshold slope are first measured as afunction of backgate voltage V-BG of from -26V to +20V applied on stainless-steel substrate, Mobilities show small dependence on VBG Threshold voltages, however, have dependence of decreasing with increasing V-BG. Subthreshold slopes also show concave-shaped dependence on VBG The results indicate that electrical characteristics of poly-Si TFTs are controlled by simply applying voltages to the substrate. Thus, application of backgate voltage are very important for design advanced poly-Si TFT integrated circuits and to secure stable operation of the circuits.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 21/09/20 alle ore 15:52:47