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Titolo:
Optimizing the growth procedure for InAs quantum dot stacks by optical in situ techniques
Autore:
Steimetz, E; Wehnert, T; Kirmse, H; Poser, F; Zettler, JT; Neumann, W; Richter, W;
Indirizzi:
Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany Tech Univ Berlin Berlin Germany D-10623 perphys, D-10623 Berlin, Germany Humboldt Univ, Inst Phys, D-10115 Berlin, Germany Humboldt Univ Berlin Germany D-10115 Inst Phys, D-10115 Berlin, Germany
Titolo Testata:
JOURNAL OF CRYSTAL GROWTH
, volume: 221, anno: 2000,
pagine: 592 - 598
SICI:
0022-0248(200012)221:<592:OTGPFI>2.0.ZU;2-4
Fonte:
ISI
Lingua:
ENG
Soggetto:
CAPPING LAYER;
Keywords:
InAs quantum dots; MOVPE; MOCVD; in situ monitoring; reflectance anisotropy spectroscopy; surface reconstruction;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
10
Recensione:
Indirizzi per estratti:
Indirizzo: Steimetz, E Tech Univ Berlin, Inst Festkorperphys, Sekr PN 6-1,Hardenbergstr 36, D-10623 Berlin, Germany Tech Univ Berlin Sekr PN 6-1,Hardenbergstr 36 Berlin Germany D-10623
Citazione:
E. Steimetz et al., "Optimizing the growth procedure for InAs quantum dot stacks by optical in situ techniques", J CRYST GR, 221, 2000, pp. 592-598

Abstract

The influence of the GaAs cap layer thickness on the surface morphology and stoichiometry of InAs quantum dot (QD) layers grown on GaAs(001) was investigated by real-time reflectance anisotropy spectroscopy (RAS) and ellipsometry. A redistribution of InAs from partially covered islands to the surface of the GaAs cap layer was found, Introducing a well-defined growth interruption (GRI) during cap layer growth, a narrower size distribution of the InAs islands could be achieved and, moreover, large clusters and dislocations in the sample could be completely avoided. Transmission electron microscopical images of stacked QD layers substantiate the growth model of island redistribution by showing a fractional second wetting layer. Using this procedure of island redistribution dislocation free 5-fold InAs QD stacks wererealized. (C) 2000 Elsevier Science B.V. All rights reserved.

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Documento generato il 23/01/21 alle ore 10:12:10