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Titolo:
In situ investigation of GaAs (001) intrinsic carbon p-doping in metal-organic vapour phase epitaxy
Autore:
Pristovsek, M; Han, B; Zettler, JT; Richter, W;
Indirizzi:
Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany Tech Univ Berlin Berlin Germany D-10623 perphys, D-10623 Berlin, Germany
Titolo Testata:
JOURNAL OF CRYSTAL GROWTH
, volume: 221, anno: 2000,
pagine: 149 - 155
SICI:
0022-0248(200012)221:<149:ISIOG(>2.0.ZU;2-8
Fonte:
ISI
Lingua:
ENG
Soggetto:
REFLECTANCE-DIFFERENCE SPECTROSCOPY; GROWTH; SURFACES; DEPOSITION;
Keywords:
MOVPE; GaAs; carbon doping; in-situ RAS;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
19
Recensione:
Indirizzi per estratti:
Indirizzo: Pristovsek, M Tech Univ Berlin, Inst Festkorperphys, PN6-1,Hardenbergstr 36, D-10623 Berlin, Germany Tech Univ Berlin PN6-1,Hardenbergstr 36 Berlin Germany D-10623
Citazione:
M. Pristovsek et al., "In situ investigation of GaAs (001) intrinsic carbon p-doping in metal-organic vapour phase epitaxy", J CRYST GR, 221, 2000, pp. 149-155

Abstract

Intrinsic carbon doping of GaAs (001) during metal-organic vapour-phase epitaxial (MOVPE) growth using low V/III ratios was investigated by in situ reflectance anisotropy spectroscopy (RAS). The surface reconstruction duringgrowth changes from arsenic-rich (1 x 2)-CH3 at high V/III ratios to gallium-rich (1 x 4)-CH3 at very low V/III ratios. This change in reconstructioncorresponds to three different incorporation regimes. For growth at low V/III ratios ((1 x 4)-CH2) the hole concentration saturates at approximate to4 x 10(19) cm(-3) and the surfaces are smooth. At intermediate V/III ratios (transition between (1 x 4)-CH2 and (1 x 2)-CH3) the doping level decreases following a power law dependency and the surface becomes rather rough. At very high V/III ratios ((1 x 2)-CH3) the surfaces become smooth again andthe doping saturates at a temperature-dependent background doping level. For the growth at very low V/III ratios a new methyl desorption/arsenic adsorption limited growth mechanism is proposed, characterized by a very high carbon incorporation and smooth surfaces. (C) 2000 Elsevier Science B.V. Allrights reserved.

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Documento generato il 21/01/21 alle ore 04:14:37