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Titolo:
In situ studies of the effect of silicon on GaN growth modes
Autore:
Munkholm, A; Stephenson, GB; Eastman, JA; Auciello, O; Murty, MVR; Thompson, C; Fini, P; Speck, JS; DenBaars, SP;
Indirizzi:
Argonne Natl Lab, Div Chem, Argonne, IL 60439 USA Argonne Natl Lab Argonne IL USA 60439 ab, Div Chem, Argonne, IL 60439 USA Argonne Natl Lab, Div Mat Sci, Argonne, IL 60439 USA Argonne Natl Lab Argonne IL USA 60439 Div Mat Sci, Argonne, IL 60439 USA No Illinois Univ, Dept Phys, De Kalb, IL 60115 USA No Illinois Univ De Kalb IL USA 60115 v, Dept Phys, De Kalb, IL 60115 USA Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA Univ CalifSanta Barbara Santa Barbara CA USA 93106 Barbara, CA 93106 USA
Titolo Testata:
JOURNAL OF CRYSTAL GROWTH
, volume: 221, anno: 2000,
pagine: 98 - 105
SICI:
0022-0248(200012)221:<98:ISSOTE>2.0.ZU;2-S
Fonte:
ISI
Lingua:
ENG
Soggetto:
CHEMICAL-VAPOR-DEPOSITION; X-RAY-DIFFRACTION; SURFACE-STRUCTURE; SCATTERING; MORPHOLOGY; AG(111);
Keywords:
GaN; silicon doping; MOCVD; X-ray scattering;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
30
Recensione:
Indirizzi per estratti:
Indirizzo: Munkholm, A Argonne Natl Lab, Div Chem, 9700 S Cass Ave, Argonne, IL 60439USA Argonne Natl Lab 9700 S Cass Ave Argonne IL USA 60439 0439 USA
Citazione:
A. Munkholm et al., "In situ studies of the effect of silicon on GaN growth modes", J CRYST GR, 221, 2000, pp. 98-105

Abstract

We present real-time X-ray scattering studies of the influence of silicon on the homoepitaxial growth mode of GaN grown by metal-organic vapor-phase epitaxy. Both annealing of Si-doped GaN and surface dosing of GaN with disilane are shown to change the mode of subsequent growth from step-flow to layer-by-layer. By comparing the growth behavior induced by doped layers which have been annealed to that induced by surface dosing, we extract an approximate diffusion coefficient for Si in GaN of 3.5 x 10(-18) cm(2)/s at 810 degreesC. (C) 2000 Elsevier Science B.V. All rights reserved.

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Documento generato il 19/09/20 alle ore 14:17:49