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Titolo:
Analysis of phase-separation region in wurtzite group III nitride quaternary material system using modified valence force field model
Autore:
Takayama, T; Yuri, M; Itoh, K; Baba, T; Harris, JS;
Indirizzi:
Matsushita Elect Corp, Semicond Co, Semicond Device Res Ctr, Takatsuki, Osaka 5691193, Japan Matsushita Elect Corp Takatsuki Osaka Japan 5691193 Osaka 5691193, Japan Stanford Univ, Solid State Elect Lab, Stanford, CA 94305 USA Stanford Univ Stanford CA USA 94305 ate Elect Lab, Stanford, CA 94305 USA
Titolo Testata:
JOURNAL OF CRYSTAL GROWTH
fascicolo: 1-2, volume: 222, anno: 2001,
pagine: 29 - 37
SICI:
0022-0248(200101)222:1-2<29:AOPRIW>2.0.ZU;2-H
Fonte:
ISI
Lingua:
ENG
Soggetto:
UNSTABLE MIXING REGION; INGAN; GAN; HETEROSTRUCTURES; IMMISCIBILITY; GAINN; ALLOY; ALN; INN;
Keywords:
group III nitride; phase separation; interaction parameter; free energy of mixing; spinodal composition; valence force field model;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
20
Recensione:
Indirizzi per estratti:
Indirizzo: Takayama, T Matsushita Elect Corp, Semicond Co, Semicond Device Res Ctr, 1-1 Saiwaicho, Takatsuki, Osaka 5691193, Japan Matsushita Elect Corp 1-1 Saiwaicho Takatsuki Osaka Japan 5691193
Citazione:
T. Takayama et al., "Analysis of phase-separation region in wurtzite group III nitride quaternary material system using modified valence force field model", J CRYST GR, 222(1-2), 2001, pp. 29-37

Abstract

The group III (B, Al, Ga, In) nitride quaternary alloy systems are potentially useful for ultraviolet, blue, and green light-emitting devices, or high-temperature, high-power, and high-frequency electronic devices. There have been significant challenges to the epitaxial growth of these alloys and we have investigated the unstable mixing region in the phase field. The existence of an unstable mixing region is predicted based on a strictly regularsolution model. The interaction parameter used in our model is analytically obtained by the valence force field model modified for wurtzite structures. From our calculations, among the group III nitride quaternary alloy systems, we find that InGaAlN system has the narrowest unstable mixing region, and that the BInAlN system has the widest unstable mixing region. The calculated interaction parameters which are the important to predict the unstable mixing region agree well with the best-fit line of experimental results for various alloy systems. (C) 2001 Elsevier Science B.V. All rights reserved.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 15/08/20 alle ore 19:43:54