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Titolo:
Atomic layer deposition of tantalum oxide thin films from iodide precursor
Autore:
Kukli, K; Aarik, J; Aidla, A; Forsgren, K; Sundqvist, J; Harsta, A; Uustare, T; Mandar, H; Kiisler, AA;
Indirizzi:
Univ Tartu, Inst Expt Phys & Technol, EE-51010 Tartu, Estonia Univ Tartu Tartu Estonia EE-51010 hys & Technol, EE-51010 Tartu, Estonia Univ Tartu, Inst Mat Sci, EE-51010 Tartu, Estonia Univ Tartu Tartu Estonia EE-51010 Inst Mat Sci, EE-51010 Tartu, Estonia Uppsala Univ, Angstrom Lab, SE-75121 Uppsala, Sweden Uppsala Univ Uppsala Sweden SE-75121 strom Lab, SE-75121 Uppsala, Sweden
Titolo Testata:
CHEMISTRY OF MATERIALS
fascicolo: 1, volume: 13, anno: 2001,
pagine: 122 - 128
SICI:
0897-4756(200101)13:1<122:ALDOTO>2.0.ZU;2-L
Fonte:
ISI
Lingua:
ENG
Soggetto:
CHEMICAL-VAPOR-DEPOSITION; TA2O5; INTEGRATION; MECHANISMS; CAPACITORS; GROWTH; H2O;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
Citazioni:
41
Recensione:
Indirizzi per estratti:
Indirizzo: Kukli, K Univ Tartu, Inst Expt Phys & Technol, Tahe 4, EE-51010 Tartu, Estonia Univ Tartu Tahe 4 Tartu Estonia EE-51010 EE-51010 Tartu, Estonia
Citazione:
K. Kukli et al., "Atomic layer deposition of tantalum oxide thin films from iodide precursor", CHEM MATER, 13(1), 2001, pp. 122-128

Abstract

Atomic layer deposition (ALD) of Ta2O5 films from evaporated TaI5 and H2O-H2O2 was investigated in the temperature range of 240-400 degreesC. It was shown that TaI5 as a novel ALD precursor is sufficiently stable for deposition of amorphous or polycrystalline films. According to XPS, the films werefree from iodine residues. The refractive index of the films reached 2.24. The film formation mechanism depended on the substrate temperature. The growth rate decreased linearly,with substrate temperature. Real time monitoring of the growth process with a quartz crystal microbalance revealed the self-limiting nature of reactions between the film surface and precursors at substrate temperatures up to 325 degreesC. Etching of Ta2O5 in the TaI5 flow was observed at around 350 degreesC and higher temperatures. At 350 degreesC, the crystal growth was also initiated.

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Documento generato il 01/12/20 alle ore 16:28:23