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Titolo:
Stranski-Krastanov growth of Si on SiC(0001)
Autore:
Fissel, A; Akhtariev, R; Richter, W;
Indirizzi:
Univ Jena, Inst Festkorperphys, D-07743 Jena, Germany Univ Jena Jena Germany D-07743 nst Festkorperphys, D-07743 Jena, Germany
Titolo Testata:
THIN SOLID FILMS
fascicolo: 1-2, volume: 380, anno: 2000,
pagine: 42 - 45
SICI:
0040-6090(200012)380:1-2<42:SGOSOS>2.0.ZU;2-5
Fonte:
ISI
Lingua:
ENG
Soggetto:
MOLECULAR-BEAM EPITAXY; THIN-FILMS; DOTS;
Keywords:
Si; superstructures; island formation; Stranski-Krastanov growth; molecular beam epitaxy (MBE); SiC;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
Citazioni:
6
Recensione:
Indirizzi per estratti:
Indirizzo: Fissel, A Univ Jena, Inst Festkorperphys, Max Wien Pl 1, D-07743 Jena, Germany Univ Jena Max Wien Pl 1 Jena Germany D-07743 7743 Jena, Germany
Citazione:
A. Fissel et al., "Stranski-Krastanov growth of Si on SiC(0001)", THIN SOL FI, 380(1-2), 2000, pp. 42-45

Abstract

The molecular beam epitaxial growth of Si on SiC(0001), exhibiting a Stranski-Krastanov mode, was investigated by reflection high-energy electron diffraction. Several surface superstructures were observed in the initial stage of growth. After exceeding a critical coverage, Si island formation sets in. Under near-equilibrium conditions, the critical coverage was 1.4 monalayers and corresponds to the occurrence of a 3 x 3 superstructure remaining as a wetting layer after the island formation. island formation at high deposition rates (R) and low temperatures (T) is kinetically delayed, which can be described as function of R and the diffusivity D by a relationship t(c) proportional to rootR/D. Si islands, which were relatively uniform size of several nm with a density of 10(11) cm,were obtained under these conditions. At fewer R values the critical thickness is only a function of T, indicating that the incorporation time of adatoms is the relevant time scale forsurface diffusion. Ordered arrays of small dots were also grown on vicinalsurfaces at higher T and lower R values, which can be attributed to a lower diffusivity at step edges, acting as perfect sinks for the Si adatoms. Furthermore, two different kinds of islands were found with a (111)/(0001) and (110)/(0001) epitaxial relationship. (C) 2000 Elsevier Science B.V. All rights reserved.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 23/01/21 alle ore 08:39:38