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Titolo:
Ge growth mode modification on carbon-induced Si(001)-c(4 x 4) surfaces
Autore:
Stoffel, M; Simon, L; Bischoff, JL; Aubel, D; Kubler, L; Castelein, G;
Indirizzi:
ESA, CNRS 7014, Lab Phys & Spect Elect, F-68093 Mulhouse, France ESA Mulhouse France F-68093 Phys & Spect Elect, F-68093 Mulhouse, France Inst Chim Surfaces & Interfaces, UPR 9069, F-68057 Mulhouse, France Inst Chim Surfaces & Interfaces Mulhouse France F-68057 Mulhouse, France
Titolo Testata:
THIN SOLID FILMS
fascicolo: 1-2, volume: 380, anno: 2000,
pagine: 32 - 35
SICI:
0040-6090(200012)380:1-2<32:GGMMOC>2.0.ZU;2-E
Fonte:
ISI
Lingua:
ENG
Soggetto:
SI(100);
Keywords:
germanium; silicium; carbon; RHEED; AFM; growth mode;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
Citazioni:
8
Recensione:
Indirizzi per estratti:
Indirizzo: Stoffel, M ESA, CNRS 7014, Lab Phys & Spect Elect, FST-4,Rue Freres Lumiere, F-68093 Mulhouse, France ESA FST-4,Rue Freres Lumiere Mulhouse France F-68093 e, France
Citazione:
M. Stoffel et al., "Ge growth mode modification on carbon-induced Si(001)-c(4 x 4) surfaces", THIN SOL FI, 380(1-2), 2000, pp. 32-35

Abstract

Strong Ge morphological modifications were observed upon an ordered C-pre-covered Si(001)-c(4 x 4) reconstructed surface used as a template as compared to the growth on bare Si(001)-(2 x 1) substrates. While on bare substrates, the Ge wetting layer of the Stranski-Krastanov mode has a critical thickness of approximately 3-4 monolayers (ML), with the c-(4 x 4) template, island nucleation already occurs after 1 Ge ML and growth proceeds in a Volmer-Weber mode. This suggests that the C-rich surface derm associated with the c-(4 x 4) reconstruction is able to strongly affect the Ge wetting. (C) 2000 Elsevier Science B.V. All rights reserved.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 24/09/20 alle ore 21:27:55