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Titolo:
Control of magnetization reversal process by light illumination in ferromagnetic semiconductor heterostructure p-(In, Mn)As/GaSb
Autore:
Oiwa, A; Slupinski, T; Munekata, H;
Indirizzi:
KAST, Takatsu Ku, Kawasaki, Kanagawa 2130012, Japan KAST Kawasaki Kanagawa Japan 2130012 u, Kawasaki, Kanagawa 2130012, Japan Tokyo Inst Technol, Imaging Sci & Engn Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan Tokyo Inst Technol Yokohama Kanagawa Japan 2268503 anagawa 2268503, Japan
Titolo Testata:
APPLIED PHYSICS LETTERS
fascicolo: 4, volume: 78, anno: 2001,
pagine: 518 - 520
SICI:
0003-6951(20010122)78:4<518:COMRPB>2.0.ZU;2-#
Fonte:
ISI
Lingua:
ENG
Soggetto:
(IN,MN)AS/(GA,AL)SB;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
15
Recensione:
Indirizzi per estratti:
Indirizzo: Oiwa, A KAST, Takatsu Ku, 3-2-1 Sakudo, Kawasaki, Kanagawa 2130012, Japan KAST 3-2-1 Sakudo Kawasaki Kanagawa Japan 2130012 a 2130012, Japan
Citazione:
A. Oiwa et al., "Control of magnetization reversal process by light illumination in ferromagnetic semiconductor heterostructure p-(In, Mn)As/GaSb", APPL PHYS L, 78(4), 2001, pp. 518-520

Abstract

The reduction in coercive force by light illumination has been found in ferromagnetic semiconductor heterostructure p-(In, Mn)As/GaSb prepared by molecular-beam epitaxy. Enhanced ferromagnetic coupling between Mn ions, arising from excess photogenerated holes, reduces the domain wall energy and changes the magnetization hysteresis characteristics. The value of coercive force returns to the original value when excess holes recombine with trapped electrons. (C) 2001 American Institute of Physics.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 19/09/20 alle ore 15:22:15